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IRFH5255TR2PBF-VB Product details

Product introduction:

1. Product Introduction

IRFH5255TR2PBF-VB is a high-performance single N-channel power MOSFET in DFN8 (5x6) package, designed for high current and high efficiency applications. Its drain-source voltage (VDS) is 30V, and the maximum drain current (ID) can reach 120A, which can handle large currents and maintain low on-resistance. Through advanced trench technology, IRFH5255TR2PBF-VB provides excellent switching performance and low conduction losses, suitable for high power density and high efficiency applications. Its threshold voltage (Vth) is 1.7V, which is suitable for circuit design with low gate drive voltage.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 120A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
2. Detailed parameter description

- **Package type**: DFN8 (5x6)
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 5mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **ID (drain current)**: 120A
- **Technology**: Trench technology

The low RDS(ON) value and high current capability of this MOSFET enable it to have excellent performance in high power applications, and can maintain efficient power conversion under high current conditions.

Domain and module applications:

III. Application fields and module examples

1. **High-efficiency power management**
IRFH5255TR2PBF-VB is an ideal choice for high-efficiency power management modules, especially DC-DC converters and power distribution systems. Its low on-resistance and high current carrying capacity can significantly improve power conversion efficiency and reduce energy loss, and is suitable for applications that require high-efficiency power conversion, such as computer power supplies and battery chargers.

2. **Electric vehicle battery management system**
In the battery management system of electric and hybrid vehicles, the high current handling capability and low conduction loss of this MOSFET can effectively improve the efficiency of battery charging and discharging, ensuring the safety and performance of the battery. It is suitable for high-power switching and control in battery protection and motor drive systems.

3. **Industrial motor control**
IRFH5255TR2PBF-VB also performs well in industrial motor control modules, especially in applications that require high current and high efficiency, such as variable frequency drives and servo control systems. Its high current capability and low on-resistance make it suitable for various high-performance motor control systems, improving the efficiency and reliability of motor drives.

4. **Communication equipment power supply**
For power management modules in communication equipment, such as wireless base stations and routers, the low RDS(ON) and high current carrying capacity of the IRFH5255TR2PBF-VB help improve the stability and efficiency of the power system. It can maintain reliable power supply under high load conditions, ensuring the stable operation of communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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