Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
80V |
|
3V |
60A |
|
|
5mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
80V |
|
3V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
80V |
|
3V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: DFN8 (5x6)
The DFN8 (5x6) package is small and has excellent thermal performance, suitable for space-constrained applications such as portable electronic devices and compact power modules.
2. **Configuration**: Single N-channel
The single N-channel MOSFET configuration is suitable for efficient switching applications, providing fast switching speeds and high current carrying capabilities.
3. **Drain-source voltage (VDS)**: 80V
With a drain-source voltage of 80V, it is suitable for medium voltage applications such as low- and medium-power power conversion and load switching.
4. **Gate-source voltage (VGS)**: ±20V
The gate-source voltage range is ±20V, suitable for various drive circuits, providing flexible control options.
5. **Threshold Voltage (Vth)**: 3V
The threshold voltage of 3V ensures that the MOSFET can switch at a lower voltage, which is suitable for low-voltage logic circuits.
6. **RDS(ON)**:
- **7mΩ @ VGS = 4.5V**
- **5mΩ @ VGS = 10V**
Low on-resistance helps reduce power loss and improve overall system efficiency.
7. **Maximum Drain Current (ID)**: 60A
The maximum drain current of 60A makes it suitable for high current applications and can handle high power loads.
8. **Technology**: Trench
The use of Trench technology optimizes the conduction performance and switching speed, which is suitable for efficient switching and power handling applications.
Domain and module applications:
Applications and module examples
1. **High-efficiency power converters**
IRFH5207TRPBF-VB is ideal for **high-efficiency power converters**. Its low on-resistance and high current carrying capacity enable it to excel in switching power supplies and DC-DC converters, capable of handling high power and reducing energy loss, and is suitable for servers, communication equipment, and computer power supplies, etc.
2. **Motor drive**
In **motor drive** applications, this MOSFET can effectively drive high-current motors, suitable for power tools, industrial robots, and automation equipment. Its high current capability and low on-resistance ensure high efficiency and reliability of motor drive.
3. **Solar inverter**
IRFH5207TRPBF-VB can be used in power switch modules in **solar inverter**. Its 80V drain-source voltage and high current handling capability are suitable for efficient power conversion in solar systems, improving the overall efficiency of the system.
4. **Battery Management System**
In **Battery Management System**, this MOSFET can provide efficient switching performance, suitable for overcurrent protection and power regulation of lithium-ion batteries and other types of batteries, ensuring stable charging and discharging of batteries.
5. **Electric Vehicle Charger**
IRFH5207TRPBF-VB is a high-efficiency power conversion module suitable for **Electric Vehicle Charger**, which can handle larger currents and improve charging efficiency, providing a stable and efficient charging solution for electric vehicles.
With its high current carrying capacity and low on-resistance, this MOSFET is widely used in power conversion, motor drive, solar energy system and battery management and other fields, providing efficient and stable performance support for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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