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IRFH5104TRPBF-VB Product details

Product introduction:

**IRFH5104TRPBF-VB MOSFET Product Introduction: **

IRFH5104TRPBF-VB is a **single N-channel MOSFET**, using **DFN8 (5x6)** package, with **40V drain-source voltage (VDS)** and **±20V gate-source voltage (VGS)** tolerance capability. Its **on-resistance (RDS(ON)) is 2mΩ@VGS=10V**, supporting up to **120A continuous current**, which is very suitable for high-power demand applications. The device uses **Trench technology**, with low conduction loss and high-efficiency conversion capability, and is particularly suitable for high-efficiency power management and load switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 40V 3V 120A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 40V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 40V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
## **Detailed parameter description:**

- **Model:** IRFH5104TRPBF-VB
- **Package:** DFN8 (5x6)
- **Channel configuration:** Single N-channel
- **Technology:** Trench
- **VDS (drain-source voltage):** 40V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** 3V
- **RDS(ON) (on-resistance):** 2mΩ @ VGS = 10V
- **ID (maximum continuous drain current):** 120A
- **Qg (total gate charge):** 38nC @ VGS=10V
- **Qgs (gate-source charge):** 5nC
- **Qgd (gate-drain charge):** 10nC
- **Gate drive voltage range:** ±20V
- **Ptot (total power dissipation):** 85W
- **Rise time (tr):** 30ns
- **Fall time (tf):** 22ns
- **Operating temperature range:** -55°C to 175°C

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Domain and module applications:



1. **High-efficiency DC-DC converters: **
IRFH5104TRPBF-VB is widely used in **DC-DC converters**, especially for high-frequency switching and low-loss designs. Its **ultra-low on-resistance of 2mΩ** ensures high efficiency and low heat dissipation, making it an ideal choice for server power supplies and industrial power conversion.

2. **Load switch: **
Due to its **high current handling capability of 120A**, this MOSFET is suitable for high-power load management systems that require fast switching, such as **power switches** and **motor drives**. Its low conduction losses make it excel in high-efficiency load switching applications.

3. **Battery Management System (BMS): **
IRFH5104TRPBF-VB is particularly suitable for high-power battery packs and battery protection circuits in **battery management systems**, ensuring fast switching and effective management of high-current charging and discharging processes while maintaining low losses and high efficiency.

4. **Power tool drive: **
This device can also be used in **power tool drive circuits**. With its excellent low on-resistance and high current support, it can improve the efficiency and response speed of the tool, thereby extending the battery life and improving working performance.

5. **Solar inverter: **
In **solar inverter**, IRFH5104TRPBF-VB can be used in high-efficiency power management modules. With its low loss and fast switching characteristics, it ensures that the energy generated by solar cells can be efficiently transmitted and utilized.

6. **Consumer electronics power management: **
In addition, IRFH5104TRPBF-VB is also suitable for power management modules of consumer electronics such as **smartphones and laptops**. With its high-efficiency conversion capabilities, it can improve the battery life and charging efficiency of the products.

In general, the IRFH5104TRPBF-VB MOSFET is widely used in many fields such as DC-DC converters, battery management systems, power tool drives, power management and solar inverters due to its **high current handling capability, low on-resistance and high-efficiency Trench technology**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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