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IRFH5004TRPBF-VB Product details

Product introduction:

1. IRFH5004TRPBF-VB Product Introduction

IRFH5004TRPBF-VB is a high-performance N-channel MOSFET in a compact DFN8 (5x6) package suitable for high-density circuit design. It has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, and uses advanced Trench technology to provide very low on-resistance (RDS(ON)), which is 2mΩ at VGS=10V. This provides extremely low power loss in high-current applications, with a maximum drain current (ID) of 120A, suitable for high-efficiency power conversion and power switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 40V 3V 120A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 40V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 40V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
II. Detailed parameter description of IRFH5004TRPBF-VB

- **Package type**: DFN8 (5x6)
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Process technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Maximum power dissipation**: Depends on heat dissipation conditions

Domain and module applications:

3. Application fields and module description

1. **Power management system**: With its low on-resistance and high current carrying capacity, the IRFH5004TRPBF-VB is ideal for DC-DC converters, synchronous rectifiers, and power switch modules. It provides high-efficiency energy transfer and reduces power loss in low-voltage, high-current power management applications.

2. **Automotive electronics**: Due to its high current handling capability, the IRFH5004TRPBF-VB is widely used in automotive power management systems, such as electric power steering (EPS), battery management systems (BMS), and other modules that require high-power switches.

3. **Server and data center power modules**: In servers and data centers, highly efficient power conversion is required to reduce operating costs. The IRFH5004TRPBF-VB can provide low-loss, high-current power switches in these applications, thereby improving the energy efficiency of the entire system.

4. **Consumer Electronics**: In power modules for laptops, desktop computers, and high-performance gaming devices, this MOSFET ensures fast-response power conversion, maintaining stability and low energy consumption when the device is running at high loads.

5. **Communications**: The IRFH5004TRPBF-VB is also suitable for high-efficiency power modules and load switches in communications equipment, and performs well when handling high currents and high-speed signal switching.

The device is suitable for a variety of application scenarios that require efficient energy management and low losses, and has advantages in modules with compact space and high performance requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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