Featured Model

Your present location > Home page > Featured Model

IRFBF30-VB Product details

Product introduction:

IRFBF30-VB MOSFET Product Introduction

IRFBF30-VB is a high voltage single N-channel MOSFET specially designed to handle high voltage applications with a maximum drain-source voltage (VDS) of up to **900V**. This MOSFET uses **Super Junction Multilayer Epitaxial (SJ_Multi-EPI)** technology, enabling it to provide stable performance under high voltage conditions. Despite its high on-resistance (RDS(ON)) of **1500mΩ**, it still performs well in handling power dissipation and thermal management in high voltage environments. The maximum drain current (ID) of IRFBF30-VB is **5A**, suitable for high voltage applications with medium current loads.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 900V 3.5V 5A 1500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 900V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 900V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

1. **Package**: TO220
The TO220 package is designed for high power and high voltage applications, which can effectively dissipate heat and ensure stable operation of the MOSFET under high load.

2. **Configuration**: Single N-channel
Single N-channel MOSFET is suitable for low-side switching and is widely used in power conversion and voltage regulation circuits.

3. **Drain-source voltage (VDS)**: 900V
The maximum drain-source voltage of **900V** makes this MOSFET particularly suitable for high voltage switching and power conversion applications.

4. **Gate-source voltage (VGS)**: ±30V
Supports gate-source voltages of positive and negative **30V**, which enhances the driving flexibility and compatibility of the MOSFET.

5. **Threshold Voltage (Vth)**: 3.5V
**3.5V** threshold voltage allows it to operate at standard logic levels, suitable for high-voltage switching requirements of various control circuits.

6. **RDS(ON)**:
- **1500mΩ @ VGS = 10V**
High on-resistance means relatively high conduction loss under high voltage operation, but it can still maintain reliability in high voltage applications.

7. **Maximum Drain Current (ID)**: 5A
Maximum **5A** current carrying capacity is suitable for applications with medium current loads.

8. **Technology**: Super Junction Multi-EPI (SJ_Multi-EPI)
This technology improves the conduction performance under high voltage, reduces power consumption and heat loss, and improves the stability of MOSFET under high voltage conditions.

Domain and module applications:

Applications and module examples

1. **High-voltage power switch**
The IRFBF30-VB MOSFET is suitable for **high-voltage power switch** applications, such as high-voltage DC-DC converters and switch mode power supplies (SMPS). Its high voltage capability ensures stable operation under high voltage conditions, and its high voltage characteristics make it reliable in high-voltage applications despite its higher on-resistance.

2. **High-voltage inverter**
In **high-voltage inverter**, such as those used in photovoltaic power generation systems and wind power generation systems, the 900V drain-source voltage capability of the IRFBF30-VB allows it to handle high-voltage loads while providing stable power conversion.

3. **High-voltage battery management system**
In a **battery management system** (BMS) for high-voltage battery systems, the IRFBF30-VB is suitable for controlling the charging and discharging process of high-voltage batteries, ensuring that the system operates safely and reliably.

4. **High-voltage power factor correction (PFC) circuits**
IRFBF30-VB can be used in **high-voltage power factor correction circuits**, which are often used to improve the power factor and efficiency of power systems. Its high voltage tolerance and stability ensure the reliability of PFC circuits in high-voltage environments.

5. **Power protection and switch control**
In **power protection** and **switch control** applications, IRFBF30-VB can be used to protect power systems from excessive voltage while providing high-voltage switching functions in switch control circuits.

The high-voltage capability and multi-layer epitaxial technology of IRFBF30-VB MOSFET make it suitable for **high-voltage power switches**, **high-voltage inverters**, **high-voltage battery management systems**, **high-voltage power factor correction circuits**, as well as **power protection** and **switch control**, providing a reliable solution for power conversion and voltage regulation applications in high-voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat