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IRFBF30STRR-VB Product details

Product introduction:

Product Introduction - IRFBF30STRR-VB MOSFET

IRFBF30STRR-VB is a high voltage single N-channel MOSFET in a TO-263 package, designed for high voltage and medium current applications. Its drain-source voltage (VDS) is as high as 900V, capable of withstanding very high voltage loads. The on-resistance (RDS(ON)) of this MOSFET is 950mΩ at a VGS of 10V, with low switching losses and efficient current control. Based on SJ_Multi-EPI (Super Junction Multi-Epi) technology, the IRFBF30STRR-VB provides good switching performance and thermal stability, making it ideal for high voltage power management and high voltage switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 900V 3.5V 7A 950mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 900V 3.5V 7A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 900V 3.5V 7A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

- **Model**: IRFBF30STRR-VB
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 950mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi)
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO-263, providing good heat dissipation capability and reliable mechanical strength.

Domain and module applications:

Applications and modules

1. **High-voltage power converters**:
The 900V withstand voltage of the IRFBF30STRR-VB makes it ideal for use in high-voltage power converters, such as high-voltage DC-DC converters and AC-DC converters. Its low on-resistance and stable switching performance can effectively handle high voltage inputs and reduce power consumption, and is widely used in industrial power supplies and power management systems.

2. **Motor drive control**:
In motor drive applications that require high voltage, the IRFBF30STRR-VB can withstand higher voltage loads and is suitable for high-voltage motors and motor control systems. Its excellent switching performance and medium current capability make it suitable for use in motor drive modules in high-voltage environments.

3. **Power electronic devices**:
This MOSFET is suitable for a variety of power electronic devices, such as power inverters, solar inverters, and UPS (uninterruptible power supplies). The high voltage handling capability and stable switching characteristics of the IRFBF30STRR-VB enable it to effectively control high voltage loads in these systems, improving the efficiency and reliability of the overall system.

4. **High-voltage switch applications**:
In high-voltage switch applications, such as high-voltage chargers and high-voltage battery management systems, IRFBF30STRR-VB can efficiently handle high-voltage loads. Its high voltage tolerance and stable performance ensure reliable operation in high-voltage environments, and is suitable for applications requiring high voltage resistance and high reliability.

IRFBF30STRR-VB MOSFET performs well in high-voltage applications with its high voltage resistance, low on-resistance and good switching performance, and is an ideal choice for high-voltage power supplies, electronic equipment and switch control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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