IRFBF30STRR-VB Product details
Product introduction:
IRFBF30STRR-VB is a high voltage single N-channel MOSFET in a TO-263 package, designed for high voltage and medium current applications. Its drain-source voltage (VDS) is as high as 900V, capable of withstanding very high voltage loads. The on-resistance (RDS(ON)) of this MOSFET is 950mΩ at a VGS of 10V, with low switching losses and efficient current control. Based on SJ_Multi-EPI (Super Junction Multi-Epi) technology, the IRFBF30STRR-VB provides good switching performance and thermal stability, making it ideal for high voltage power management and high voltage switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: IRFBF30STRR-VB
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 950mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi)
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO-263, providing good heat dissipation capability and reliable mechanical strength.
Domain and module applications:
1. **High-voltage power converters**:
The 900V withstand voltage of the IRFBF30STRR-VB makes it ideal for use in high-voltage power converters, such as high-voltage DC-DC converters and AC-DC converters. Its low on-resistance and stable switching performance can effectively handle high voltage inputs and reduce power consumption, and is widely used in industrial power supplies and power management systems.
2. **Motor drive control**:
In motor drive applications that require high voltage, the IRFBF30STRR-VB can withstand higher voltage loads and is suitable for high-voltage motors and motor control systems. Its excellent switching performance and medium current capability make it suitable for use in motor drive modules in high-voltage environments.
3. **Power electronic devices**:
This MOSFET is suitable for a variety of power electronic devices, such as power inverters, solar inverters, and UPS (uninterruptible power supplies). The high voltage handling capability and stable switching characteristics of the IRFBF30STRR-VB enable it to effectively control high voltage loads in these systems, improving the efficiency and reliability of the overall system.
4. **High-voltage switch applications**:
In high-voltage switch applications, such as high-voltage chargers and high-voltage battery management systems, IRFBF30STRR-VB can efficiently handle high-voltage loads. Its high voltage tolerance and stable performance ensure reliable operation in high-voltage environments, and is suitable for applications requiring high voltage resistance and high reliability.
IRFBF30STRR-VB MOSFET performs well in high-voltage applications with its high voltage resistance, low on-resistance and good switching performance, and is an ideal choice for high-voltage power supplies, electronic equipment and switch control systems.
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