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IRFBF30STRL-VB Product details
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IRFBF30STRL-VB MOSFET Product Introduction
IRFBF30STRL-VB is a high voltage N-channel power MOSFET packaged in TO263, using advanced super junction multi-epitaxial technology (SJ_Multi-EPI Technology). This MOSFET is designed to handle high voltage applications, with a maximum drain-source voltage of up to 900V and a maximum drain current of 7A. Its on-resistance is 950mΩ@VGS=10V, which is suitable for maintaining stable performance in high voltage environments. IRFBF30STRL-VB is particularly suitable for applications requiring high voltage and high reliability.
IRFBF30STRL-VB is a high voltage N-channel power MOSFET packaged in TO263, using advanced super junction multi-epitaxial technology (SJ_Multi-EPI Technology). This MOSFET is designed to handle high voltage applications, with a maximum drain-source voltage of up to 900V and a maximum drain current of 7A. Its on-resistance is 950mΩ@VGS=10V, which is suitable for maintaining stable performance in high voltage environments. IRFBF30STRL-VB is particularly suitable for applications requiring high voltage and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IRFBF30STRL-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ@VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology type**: Super junction multi-epitaxial technology (SJ_Multi-EPI Technology)
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ@VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology type**: Super junction multi-epitaxial technology (SJ_Multi-EPI Technology)
Domain and module applications：
Applicable fields and modules
1. **High-voltage power conversion**: The IRFBF30STRL-VB is suitable for power conversion applications that require high voltage handling, such as high-voltage DC-DC converters and switch mode power supplies (SMPS). Its drain-source voltage capability of up to 900V enables it to provide effective switching and power management in high-voltage power systems, while reducing power losses and improving overall system efficiency.
2. **Motor drive system**: In some motor drive systems that need to handle high voltages, the IRFBF30STRL-VB can stably control the operation of the motor, especially in applications under high voltage environments, such as high-voltage electric vehicle drive systems. Its stable performance and high voltage tolerance ensure the reliability and efficiency of the motor drive system.
3. **Power inverter**: This MOSFET can be used in power inverters, especially inverter applications that require high voltage handling, such as solar inverters and wind inverters. The IRFBF30STRL-VB can effectively handle high voltage DC, ensuring stable and efficient operation of the inverter system.
4. **Grid and Energy Management**: In grid control and energy management systems, the high voltage handling capability of the IRFBF30STRL-VB makes it suitable for use in smart grids, UPS systems, and large energy storage systems. Its design provides stable high voltage control and protection, ensuring the safe and reliable operation of these systems in high voltage environments.
1. **High-voltage power conversion**: The IRFBF30STRL-VB is suitable for power conversion applications that require high voltage handling, such as high-voltage DC-DC converters and switch mode power supplies (SMPS). Its drain-source voltage capability of up to 900V enables it to provide effective switching and power management in high-voltage power systems, while reducing power losses and improving overall system efficiency.
2. **Motor drive system**: In some motor drive systems that need to handle high voltages, the IRFBF30STRL-VB can stably control the operation of the motor, especially in applications under high voltage environments, such as high-voltage electric vehicle drive systems. Its stable performance and high voltage tolerance ensure the reliability and efficiency of the motor drive system.
3. **Power inverter**: This MOSFET can be used in power inverters, especially inverter applications that require high voltage handling, such as solar inverters and wind inverters. The IRFBF30STRL-VB can effectively handle high voltage DC, ensuring stable and efficient operation of the inverter system.
4. **Grid and Energy Management**: In grid control and energy management systems, the high voltage handling capability of the IRFBF30STRL-VB makes it suitable for use in smart grids, UPS systems, and large energy storage systems. Its design provides stable high voltage control and protection, ensuring the safe and reliable operation of these systems in high voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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