中文
English
IRFBF30SPBF-VB Product details
Back to previous pageProduct introduction：
Product Introduction: IRFBF30SPBF-VB
IRFBF30SPBF-VB is a high voltage N-channel MOSFET with TO263 package and advanced SJ_Multi-EPI (super junction multi-epitaxial) technology. This MOSFET is designed for high voltage environments and can withstand drain-source voltage (VDS) up to 900V and a continuous drain current (ID) of 7A. Its on-resistance (RDS(ON)) is 950mΩ @ VGS = 10V, which can handle high voltage applications while maintaining low power consumption. IRFBF30SPBF-VB provides excellent switching performance and reliability, and is ideal for use in electronic systems for high voltage switching and control.
IRFBF30SPBF-VB is a high voltage N-channel MOSFET with TO263 package and advanced SJ_Multi-EPI (super junction multi-epitaxial) technology. This MOSFET is designed for high voltage environments and can withstand drain-source voltage (VDS) up to 900V and a continuous drain current (ID) of 7A. Its on-resistance (RDS(ON)) is 950mΩ @ VGS = 10V, which can handle high voltage applications while maintaining low power consumption. IRFBF30SPBF-VB provides excellent switching performance and reliability, and is ideal for use in electronic systems for high voltage switching and control.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
1. **Package type**: TO263
2. **Configuration**: Single N-channel MOSFET
3. **Drain-source voltage (VDS)**: 900V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
7. **Continuous drain current (ID)**: 7A
8. **Working technology**: SJ_Multi-EPI (Superjunction Multi-Epi)
9. **Power dissipation (Pd)**: 175W
10. **Operating temperature range**: -55°C to 150°C
11. **Gate charge (Qg)**: 65nC (typical)
12. **Input capacitance (Ciss)**: 1800pF (typical value)
1. **Package type**: TO263
2. **Configuration**: Single N-channel MOSFET
3. **Drain-source voltage (VDS)**: 900V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
7. **Continuous drain current (ID)**: 7A
8. **Working technology**: SJ_Multi-EPI (Superjunction Multi-Epi)
9. **Power dissipation (Pd)**: 175W
10. **Operating temperature range**: -55°C to 150°C
11. **Gate charge (Qg)**: 65nC (typical)
12. **Input capacitance (Ciss)**: 1800pF (typical value)
Domain and module applications：
Application fields and module examples:
1. **High-voltage switch-mode power supply (SMPS)**: The 900V VDS and low RDS(ON) characteristics of the IRFBF30SPBF-VB make it very suitable for high-voltage switch-mode power supply applications. This MOSFET can be used in DC-DC converters and power modules with high voltage input to achieve efficient voltage conversion and low power operation.
2. **Solar inverter**: In high-voltage power conversion devices such as solar inverters, the IRFBF30SPBF-VB can handle 900V voltage input to ensure efficient DC-AC conversion. Its low on-resistance can reduce energy loss during the conversion process and improve the overall operating efficiency of the system.
3. **High-voltage motor drive system**: In high-voltage motor drive applications, such as electric vehicles or industrial motor drives, the high voltage capability and stable performance of the IRFBF30SPBF-VB can effectively control the high voltage input of the motor, thereby improving the reliability and efficiency of the system.
4. **Industrial Power Converters**: The high voltage and high power handling capabilities of this MOSFET make it an ideal choice in industrial power converters and inverters. It can be used to control and regulate high voltage power supplies, ensuring stable operation of power systems in industrial environments.
1. **High-voltage switch-mode power supply (SMPS)**: The 900V VDS and low RDS(ON) characteristics of the IRFBF30SPBF-VB make it very suitable for high-voltage switch-mode power supply applications. This MOSFET can be used in DC-DC converters and power modules with high voltage input to achieve efficient voltage conversion and low power operation.
2. **Solar inverter**: In high-voltage power conversion devices such as solar inverters, the IRFBF30SPBF-VB can handle 900V voltage input to ensure efficient DC-AC conversion. Its low on-resistance can reduce energy loss during the conversion process and improve the overall operating efficiency of the system.
3. **High-voltage motor drive system**: In high-voltage motor drive applications, such as electric vehicles or industrial motor drives, the high voltage capability and stable performance of the IRFBF30SPBF-VB can effectively control the high voltage input of the motor, thereby improving the reliability and efficiency of the system.
4. **Industrial Power Converters**: The high voltage and high power handling capabilities of this MOSFET make it an ideal choice in industrial power converters and inverters. It can be used to control and regulate high voltage power supplies, ensuring stable operation of power systems in industrial environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
