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IRFBF20STRR-VB Product details
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IRFBF20STRR-VB MOSFET Product Introduction:
**IRFBF20STRR-VB** is a high voltage N-channel MOSFET, using **SJ_Multi-EPI** technology, packaged in a TO-263 housing, with **900V** drain-source voltage and **7A** leakage current handling capability. Its low on-resistance (**RDS(ON) = 950mΩ @ VGS = 10V**) enables it to provide effective power control and conversion in high voltage environments. The MOSFET is designed for efficient switching power supplies, inverters, and industrial power control, where it is necessary to handle high voltages and maintain low on-state power consumption.
**IRFBF20STRR-VB** is a high voltage N-channel MOSFET, using **SJ_Multi-EPI** technology, packaged in a TO-263 housing, with **900V** drain-source voltage and **7A** leakage current handling capability. Its low on-resistance (**RDS(ON) = 950mΩ @ VGS = 10V**) enables it to provide effective power control and conversion in high voltage environments. The MOSFET is designed for efficient switching power supplies, inverters, and industrial power control, where it is necessary to handle high voltages and maintain low on-state power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package**: TO-263
TO-263 is a surface mount package that is easy to integrate in applications with limited space.
- **Configuration**: Single N-channel
This MOSFET is a single-channel N-type MOSFET, suitable for circuits where the current flows from the drain to the source.
- **Drain-source voltage (VDS)**: 900V
Can withstand voltages between the drain and the source up to 900V, which is very suitable for high-voltage applications.
- **Gate-source voltage (VGS)**: ±30V
Maximum gate-source voltage ensures safe operation under high voltage conditions.
- **Threshold voltage (Vth)**: 3.5V
When the gate voltage exceeds 3.5V, the MOSFET starts to turn on, which is suitable for high-precision control applications.
- **On-state resistance (RDS(ON))**: 950mΩ @ VGS = 10V
Drain-to-source on-resistance, indicating that this MOSFET can effectively reduce power losses in high voltage environments.
- **Drain current (ID)**: 7A
Maximum continuous drain current, can handle up to 7A, suitable for medium current applications.
- **Technology**: SJ_Multi-EPI
This technology provides higher current handling capability and better conduction performance, suitable for high voltage, high efficiency power conversion.
- **Package**: TO-263
TO-263 is a surface mount package that is easy to integrate in applications with limited space.
- **Configuration**: Single N-channel
This MOSFET is a single-channel N-type MOSFET, suitable for circuits where the current flows from the drain to the source.
- **Drain-source voltage (VDS)**: 900V
Can withstand voltages between the drain and the source up to 900V, which is very suitable for high-voltage applications.
- **Gate-source voltage (VGS)**: ±30V
Maximum gate-source voltage ensures safe operation under high voltage conditions.
- **Threshold voltage (Vth)**: 3.5V
When the gate voltage exceeds 3.5V, the MOSFET starts to turn on, which is suitable for high-precision control applications.
- **On-state resistance (RDS(ON))**: 950mΩ @ VGS = 10V
Drain-to-source on-resistance, indicating that this MOSFET can effectively reduce power losses in high voltage environments.
- **Drain current (ID)**: 7A
Maximum continuous drain current, can handle up to 7A, suitable for medium current applications.
- **Technology**: SJ_Multi-EPI
This technology provides higher current handling capability and better conduction performance, suitable for high voltage, high efficiency power conversion.
Domain and module applications：
Application Examples:
1. **High-voltage Switching Power Supplies (SMPS)**:
**IRFBF20STRR-VB** is suitable for use in switching power supply applications that require high voltage handling, especially those that require **900V** voltage withstand capability. It can effectively handle high voltage conversion while maintaining low on-resistance, especially suitable for industrial equipment or large power management systems.
2. **High-voltage Inverters**:
The high voltage withstand capability and low on-resistance of this MOSFET make it an ideal choice for high-voltage inverters, such as solar inverters or wind power generation systems. These systems generally require high voltage and medium current handling, and the IRFBF20STRR-VB can provide them with reliable switching control and power conversion.
3. **Motor Drives**:
In high-voltage motor drives, especially for industrial automation or large equipment control, this MOSFET can withstand high voltages and handle enough current to drive the motor. Its efficient conduction characteristics also help reduce power losses and extend equipment life.
4. **High-voltage lighting system**:
**IRFBF20STRR-VB** can be used for high-voltage lighting control, such as LED lighting systems in industry or large buildings. These applications require high-voltage switch control while ensuring energy efficiency. MOSFET can effectively meet these needs and maintain the stability and reliability of the lighting system.
This MOSFET is suitable for a variety of industrial and power electronics applications that need to handle high voltages. With its efficient power conversion and low power consumption characteristics, it can provide a reliable solution for the design of power systems.
1. **High-voltage Switching Power Supplies (SMPS)**:
**IRFBF20STRR-VB** is suitable for use in switching power supply applications that require high voltage handling, especially those that require **900V** voltage withstand capability. It can effectively handle high voltage conversion while maintaining low on-resistance, especially suitable for industrial equipment or large power management systems.
2. **High-voltage Inverters**:
The high voltage withstand capability and low on-resistance of this MOSFET make it an ideal choice for high-voltage inverters, such as solar inverters or wind power generation systems. These systems generally require high voltage and medium current handling, and the IRFBF20STRR-VB can provide them with reliable switching control and power conversion.
3. **Motor Drives**:
In high-voltage motor drives, especially for industrial automation or large equipment control, this MOSFET can withstand high voltages and handle enough current to drive the motor. Its efficient conduction characteristics also help reduce power losses and extend equipment life.
4. **High-voltage lighting system**:
**IRFBF20STRR-VB** can be used for high-voltage lighting control, such as LED lighting systems in industry or large buildings. These applications require high-voltage switch control while ensuring energy efficiency. MOSFET can effectively meet these needs and maintain the stability and reliability of the lighting system.
This MOSFET is suitable for a variety of industrial and power electronics applications that need to handle high voltages. With its efficient power conversion and low power consumption characteristics, it can provide a reliable solution for the design of power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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