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IRFBF20STRL-VB Product details
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IRFBF20STRL-VB MOSFET Product Introduction:
IRFBF20STRL-VB is a high voltage N-channel MOSFET using Super Junction (SJ_Multi-EPI) technology, with a maximum drain-source voltage (VDS) of up to 900V, designed for high voltage applications. It has efficient switching performance and low conduction loss, and can provide an on-resistance (RDS(ON)) of 950mΩ at a gate voltage of 10V, with a maximum leakage current of 7A. The MOSFET is packaged in TO-263, suitable for surface-mount high-power electronic systems, and is widely used in power conversion and high-voltage switching fields.
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IRFBF20STRL-VB is a high voltage N-channel MOSFET using Super Junction (SJ_Multi-EPI) technology, with a maximum drain-source voltage (VDS) of up to 900V, designed for high voltage applications. It has efficient switching performance and low conduction loss, and can provide an on-resistance (RDS(ON)) of 950mΩ at a gate voltage of 10V, with a maximum leakage current of 7A. The MOSFET is packaged in TO-263, suitable for surface-mount high-power electronic systems, and is widely used in power conversion and high-voltage switching fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package**: TO-263, surface mount package, suitable for circuits that require high current and high voltage processing, with good heat dissipation performance.
- **Configuration**: Unipolar N-channel MOSFET.
- **VDS (drain-source voltage)**: 900V, very suitable for high voltage power supply and switching applications.
- **VGS (gate-source voltage)**: ±30V, ensuring stable operation under high voltage conditions.
- **Vth (threshold voltage)**: 3.5V, defines the minimum gate voltage required for turn-on, ensuring that the MOSFET is reliably turned on.
- **RDS(ON) (on-resistance)**: 950mΩ @ VGS=10V, lower on-resistance provides efficient power conversion and lower losses in high voltage applications.
- **ID (continuous leakage current)**: 7A, capable of handling currents of moderate loads.
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology), significantly reducing conduction loss and switching loss, providing excellent switching efficiency and reliability.
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- **Package**: TO-263, surface mount package, suitable for circuits that require high current and high voltage processing, with good heat dissipation performance.
- **Configuration**: Unipolar N-channel MOSFET.
- **VDS (drain-source voltage)**: 900V, very suitable for high voltage power supply and switching applications.
- **VGS (gate-source voltage)**: ±30V, ensuring stable operation under high voltage conditions.
- **Vth (threshold voltage)**: 3.5V, defines the minimum gate voltage required for turn-on, ensuring that the MOSFET is reliably turned on.
- **RDS(ON) (on-resistance)**: 950mΩ @ VGS=10V, lower on-resistance provides efficient power conversion and lower losses in high voltage applications.
- **ID (continuous leakage current)**: 7A, capable of handling currents of moderate loads.
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology), significantly reducing conduction loss and switching loss, providing excellent switching efficiency and reliability.
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Domain and module applications：
Application Examples:
1. **High-voltage power conversion**:
The IRFBF20STRL-VB MOSFET is ideal for **high-voltage power converters**, such as boost and buck converters. In these applications, its high voltage rating of 900V and low conduction losses can significantly improve conversion efficiency and reduce heat generation, especially for industrial power supplies and communication power modules that require high voltage handling.
2. **Switching mode power supply (SMPS)**:
In a **switching mode power supply (SMPS)**, this MOSFET can be used as a high-efficiency switching element. Its superjunction technology ensures low switching losses, enabling it to operate efficiently under high voltage conditions, suitable for scenarios such as data center power supplies and industrial power equipment.
3. **Electric vehicle charger**:
The IRFBF20STRL-VB is also well suited for **electric vehicle charging systems**. Its high voltage and low on-resistance make it an ideal choice in high-voltage fast charging circuits, capable of handling power conversion in high-power charging systems.
4. **Solar Inverter**:
In **Solar Inverter**, this MOSFET can effectively convert DC power to AC power. Its high voltage and low loss characteristics enable it to provide efficient power conversion in photovoltaic inverters and keep heat generation low in high-power applications.
5. **Industrial Control and Motor Drive**:
In **Industrial Control Systems** and **Motor Drive**, the high voltage characteristics of IRFBF20STRL-VB enable it to provide stable and efficient power control in complex motor drive systems and industrial automation equipment, especially for those environments that require high voltage and precise control.
The wide application of IRFBF20STRL-VB in these high voltage fields makes it a key component in power conversion and control systems.
1. **High-voltage power conversion**:
The IRFBF20STRL-VB MOSFET is ideal for **high-voltage power converters**, such as boost and buck converters. In these applications, its high voltage rating of 900V and low conduction losses can significantly improve conversion efficiency and reduce heat generation, especially for industrial power supplies and communication power modules that require high voltage handling.
2. **Switching mode power supply (SMPS)**:
In a **switching mode power supply (SMPS)**, this MOSFET can be used as a high-efficiency switching element. Its superjunction technology ensures low switching losses, enabling it to operate efficiently under high voltage conditions, suitable for scenarios such as data center power supplies and industrial power equipment.
3. **Electric vehicle charger**:
The IRFBF20STRL-VB is also well suited for **electric vehicle charging systems**. Its high voltage and low on-resistance make it an ideal choice in high-voltage fast charging circuits, capable of handling power conversion in high-power charging systems.
4. **Solar Inverter**:
In **Solar Inverter**, this MOSFET can effectively convert DC power to AC power. Its high voltage and low loss characteristics enable it to provide efficient power conversion in photovoltaic inverters and keep heat generation low in high-power applications.
5. **Industrial Control and Motor Drive**:
In **Industrial Control Systems** and **Motor Drive**, the high voltage characteristics of IRFBF20STRL-VB enable it to provide stable and efficient power control in complex motor drive systems and industrial automation equipment, especially for those environments that require high voltage and precise control.
The wide application of IRFBF20STRL-VB in these high voltage fields makes it a key component in power conversion and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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