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IRFBF20SPBF-VB Product details
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IRFBF20SPBF-VB is a high voltage N-channel MOSFET suitable for applications requiring high voltage operation. With a **maximum drain-source voltage (VDS) of 900V** and a continuous **drain current (ID) of 7A**, this MOSFET is ideal for high voltage switching and power conversion applications. Its **on-resistance (RDS(ON)) is 950mΩ** (at VGS = 10V) and it uses **SJ_Multi-EPI technology** to ensure low switching losses and excellent power efficiency. **The gate-source voltage (VGS) is ±30V**, providing a wide range of gate drive control, and the **threshold voltage (Vth) is 3.5V**, ensuring fast and reliable switching operation.
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IRFBF20SPBF-VB is a high voltage N-channel MOSFET suitable for applications requiring high voltage operation. With a **maximum drain-source voltage (VDS) of 900V** and a continuous **drain current (ID) of 7A**, this MOSFET is ideal for high voltage switching and power conversion applications. Its **on-resistance (RDS(ON)) is 950mΩ** (at VGS = 10V) and it uses **SJ_Multi-EPI technology** to ensure low switching losses and excellent power efficiency. **The gate-source voltage (VGS) is ±30V**, providing a wide range of gate drive control, and the **threshold voltage (Vth) is 3.5V**, ensuring fast and reliable switching operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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### **Detailed parameter description:**
- **Model:** IRFBF20SPBF-VB
- **Package:** TO263 (surface mount package)
- **Channel configuration:** Single N-channel
- **Technology:** SJ_Multi-EPI
- **VDS (drain-source voltage):** 900V
- **VGS (gate-source voltage):** ±30V
- **Vth (threshold voltage):** 3.5V
- **RDS(ON) (on-resistance):** 950mΩ @ VGS = 10V
- **ID (maximum continuous leakage current):** 7A
- **Ptot (total power consumption):** 60W (typical)
- **Qg (total gate charge):** 150nC
- **Rise time (tr):** 180ns
- **Fall time (tf):** 140ns
- **Operating temperature range:** -55°C to 175°C
Domain and module applications：
1. **High-voltage power converters: **
The **900V drain-source voltage** of the IRFBF20SPBF-VB MOSFET is ideal for **high-voltage power converters**, such as high-voltage DC-DC converters and switch mode power supplies (SMPS). It can handle high-power and high-voltage conversion tasks, effectively reducing energy losses and improving system efficiency.
2. **Industrial automation equipment: **
In **industrial automation equipment**, this MOSFET is often used for **high-voltage motor drives** and **power management**. Its high withstand voltage characteristics enable it to reliably switch in high-voltage environments, ensuring system stability and reliability.
3. **Power transmission systems: **
The IRFBF20SPBF-VB is widely used in **power transmission and distribution modules**, especially in situations where high-voltage currents need to be handled, such as **power factor correction (PFC) circuits** and **high-voltage AC-DC converters**.
4. **Photovoltaic inverter and battery management: **
In **inverters** in photovoltaic systems and **high-voltage battery management systems**, the IRFBF20SPBF-VB can be used to handle high-voltage conversion and management tasks. This MOSFET ensures safe management of high-voltage batteries and efficient transmission of photovoltaic power.
5. **LED lighting driver: **
In **LED lighting drivers** that need to handle high voltages, the IRFBF20SPBF-VB MOSFET is used to provide stable voltage and power control, ensuring that LED lighting systems operate reliably under high-voltage environments.
6. **Electric vehicle power management: **
In **electric vehicle (EV) power management systems**, this MOSFET is suitable for **high-voltage battery protection** and **power switch control**, providing a safe power management solution for the high-voltage battery system of electric vehicles.
In general, the IRFBF20SPBF-VB MOSFET has broad application prospects in industrial automation, power transmission, photovoltaic systems, LED lighting, and electric vehicle power management due to its **900V high withstand voltage** and **medium current capability**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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