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IRFBE30S-VB Product details
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IRFBE30S-VB MOSFET Product Introduction
IRFBE30S-VB is a single N-channel MOSFET with ultra-high voltage capability, with a maximum drain-source voltage (VDS) of up to **800V** and supports a drain current (ID) of up to **7A**. It uses **Super Junction (Super Junction) Multi-Epi (SJ Multi-EPI)** technology to significantly improve efficiency and conduction performance under high voltage. Its on-resistance (RDS(ON)) is **850mΩ** at **VGS=10V**, which can provide reliable performance in high-voltage conversion and switching applications. The TO263 package provides excellent heat dissipation, making it suitable for industrial-grade high-power applications.
IRFBE30S-VB is a single N-channel MOSFET with ultra-high voltage capability, with a maximum drain-source voltage (VDS) of up to **800V** and supports a drain current (ID) of up to **7A**. It uses **Super Junction (Super Junction) Multi-Epi (SJ Multi-EPI)** technology to significantly improve efficiency and conduction performance under high voltage. Its on-resistance (RDS(ON)) is **850mΩ** at **VGS=10V**, which can provide reliable performance in high-voltage conversion and switching applications. The TO263 package provides excellent heat dissipation, making it suitable for industrial-grade high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO263
The TO263 package provides good heat dissipation and is suitable for high-power, high-voltage applications.
2. **Configuration**: Single N-channel
This MOSFET is a single N-channel configuration, typically used for low-side switches, suitable for a variety of power conversion and voltage regulation circuits.
3. **Drain-source voltage (VDS)**: 800V
The maximum **800V** drain-source voltage makes it suitable for high-voltage applications, such as high-voltage DC power supplies or inverters.
4. **Gate-source voltage (VGS)**: ±30V
Supports gate-source voltages of positive and negative **30V**, which can adapt to a wider range of drive voltages and improve the compatibility of drive circuits.
5. **Threshold Voltage (Vth)**: 3.5V
The threshold voltage of **3.5V** enables it to be driven by logic level signals, suitable for high voltage switch applications in low voltage control systems.
6. **RDS(ON)**:
- **850mΩ @ VGS = 10V**
Its on-resistance is relatively high, but it has excellent power consumption control capabilities in high voltage applications.
7. **Maximum Drain Current (ID)**: 7A
The maximum current capability is **7A**, suitable for applications with medium current loads.
8. **Technology**: Super Junction Multi-EPI (SJ_Multi-EPI)
This technology significantly reduces conduction losses under high voltage, improves energy efficiency and reliability, making the IRFBE30S-VB excel in high voltage applications.
1. **Package**: TO263
The TO263 package provides good heat dissipation and is suitable for high-power, high-voltage applications.
2. **Configuration**: Single N-channel
This MOSFET is a single N-channel configuration, typically used for low-side switches, suitable for a variety of power conversion and voltage regulation circuits.
3. **Drain-source voltage (VDS)**: 800V
The maximum **800V** drain-source voltage makes it suitable for high-voltage applications, such as high-voltage DC power supplies or inverters.
4. **Gate-source voltage (VGS)**: ±30V
Supports gate-source voltages of positive and negative **30V**, which can adapt to a wider range of drive voltages and improve the compatibility of drive circuits.
5. **Threshold Voltage (Vth)**: 3.5V
The threshold voltage of **3.5V** enables it to be driven by logic level signals, suitable for high voltage switch applications in low voltage control systems.
6. **RDS(ON)**:
- **850mΩ @ VGS = 10V**
Its on-resistance is relatively high, but it has excellent power consumption control capabilities in high voltage applications.
7. **Maximum Drain Current (ID)**: 7A
The maximum current capability is **7A**, suitable for applications with medium current loads.
8. **Technology**: Super Junction Multi-EPI (SJ_Multi-EPI)
This technology significantly reduces conduction losses under high voltage, improves energy efficiency and reliability, making the IRFBE30S-VB excel in high voltage applications.
Domain and module applications：
Applications and module examples
1. **High-voltage switching power supply (HV SMPS)**
The IRFBE30S-VB MOSFET is ideal for use in **high-voltage switching power supplies** (such as HV SMPS), which are commonly used in industrial, communication base stations, and power grid applications. Its high drain-source voltage of 800V allows it to handle high input voltages, suitable for high-voltage conversion from DC to DC.
2. **High-voltage inverter**
In **high-voltage inverter** applications, especially for solar photovoltaic inverters, wind power inverters and other environments, the high voltage carrying capacity of the IRFBE30S-VB ensures the efficiency and safety of power conversion and supports efficient operation of the system.
3. **Battery Management System (BMS)**
In the **battery management system** for high-voltage lithium battery systems, the IRFBE30S-VB is able to handle high-voltage charge and discharge control, ensuring the reliability and stability of system operation.
4. **Power Factor Correction (PFC) Circuits**
This MOSFET is suitable for **Power Factor Correction (PFC)** circuits, which are often used in high-efficiency power supply systems. The IRFBE30S-VB can effectively improve the efficiency of the PFC circuit while maintaining low power consumption.
5. **Industrial Motor Control**
In **Industrial Motor Control**, this MOSFET can be used to drive high-voltage motors, especially in environments where high-voltage DC input needs to be controlled, such as high-power fans and industrial pumps.
The IRFBE30S-VB MOSFET is suitable for a variety of **high-voltage switching power supplies**, **high-voltage inverters**, **battery management systems**, and **power factor correction circuits**. Its ultra-high voltage capability and multi-layer epitaxial technology make it an ideal choice for high-power conversion and voltage regulation modules.
1. **High-voltage switching power supply (HV SMPS)**
The IRFBE30S-VB MOSFET is ideal for use in **high-voltage switching power supplies** (such as HV SMPS), which are commonly used in industrial, communication base stations, and power grid applications. Its high drain-source voltage of 800V allows it to handle high input voltages, suitable for high-voltage conversion from DC to DC.
2. **High-voltage inverter**
In **high-voltage inverter** applications, especially for solar photovoltaic inverters, wind power inverters and other environments, the high voltage carrying capacity of the IRFBE30S-VB ensures the efficiency and safety of power conversion and supports efficient operation of the system.
3. **Battery Management System (BMS)**
In the **battery management system** for high-voltage lithium battery systems, the IRFBE30S-VB is able to handle high-voltage charge and discharge control, ensuring the reliability and stability of system operation.
4. **Power Factor Correction (PFC) Circuits**
This MOSFET is suitable for **Power Factor Correction (PFC)** circuits, which are often used in high-efficiency power supply systems. The IRFBE30S-VB can effectively improve the efficiency of the PFC circuit while maintaining low power consumption.
5. **Industrial Motor Control**
In **Industrial Motor Control**, this MOSFET can be used to drive high-voltage motors, especially in environments where high-voltage DC input needs to be controlled, such as high-power fans and industrial pumps.
The IRFBE30S-VB MOSFET is suitable for a variety of **high-voltage switching power supplies**, **high-voltage inverters**, **battery management systems**, and **power factor correction circuits**. Its ultra-high voltage capability and multi-layer epitaxial technology make it an ideal choice for high-power conversion and voltage regulation modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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