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IRFBE30STRR-VB Product details
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Product Introduction - IRFBE30STRR-VB MOSFET
IRFBE30STRR-VB is a high voltage single N-channel MOSFET in a TO-263 package, designed for extremely high voltage and medium current applications. Its drain-source voltage (VDS) is as high as 800V, capable of withstanding very high voltage loads. With an on-resistance (RDS(ON)) of 850mΩ at a VGS of 10V, this MOSFET supports efficient switching operation and is suitable for current control and power conversion in high-voltage applications. Based on SJ_Multi-EPI (Super Junction Multi-Epi) technology, the IRFBE30STRR-VB provides excellent switching speed and low power consumption, making it ideal for efficient energy management and high-voltage power systems.
IRFBE30STRR-VB is a high voltage single N-channel MOSFET in a TO-263 package, designed for extremely high voltage and medium current applications. Its drain-source voltage (VDS) is as high as 800V, capable of withstanding very high voltage loads. With an on-resistance (RDS(ON)) of 850mΩ at a VGS of 10V, this MOSFET supports efficient switching operation and is suitable for current control and power conversion in high-voltage applications. Based on SJ_Multi-EPI (Super Junction Multi-Epi) technology, the IRFBE30STRR-VB provides excellent switching speed and low power consumption, making it ideal for efficient energy management and high-voltage power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: IRFBE30STRR-VB
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 850mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi)
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO-263, providing higher heat dissipation capability and mechanical strength.
- **Model**: IRFBE30STRR-VB
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 850mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi)
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO-263, providing higher heat dissipation capability and mechanical strength.
Domain and module applications：
Applications and modules
1. **High-voltage power converters**:
The 800V withstand voltage capability of the IRFBE30STRR-VB makes it an ideal choice for high-voltage DC-DC or AC-DC converters, especially for industrial-grade power systems. This MOSFET can handle extremely high voltage inputs and ensure low power consumption, and is widely used in energy management modules for high-power devices.
2. **Motor drive control systems**:
In motor drive applications that require high voltage support, the IRFBE30STRR-VB can handle larger voltage loads due to its high withstand voltage capability. It is suitable for use in industrial motors and high-voltage motor control modules, especially in some environments that require higher voltage and medium current handling.
3. **Grid infrastructure**:
For high-voltage switch applications in power grid systems, the IRFBE30STRR-VB can achieve efficient switch control in high voltage environments, reduce system power consumption and improve efficiency. It is often used in power management, substations and voltage regulation systems for smart grids.
4. **New Energy Systems**:
This MOSFET is also suitable for high-voltage control parts in new energy applications such as solar photovoltaic systems and wind energy conversion equipment. In these fields, the IRFBE30STRR-VB can efficiently handle high-voltage inputs to ensure system stability and high efficiency of energy conversion.
The high withstand voltage, stable switching performance and good heat dissipation characteristics of the IRFBE30STRR-VB MOSFET make it an ideal choice for high-voltage power supply and current control applications. It performs particularly well in environments that require reliability, stability and high efficiency.
1. **High-voltage power converters**:
The 800V withstand voltage capability of the IRFBE30STRR-VB makes it an ideal choice for high-voltage DC-DC or AC-DC converters, especially for industrial-grade power systems. This MOSFET can handle extremely high voltage inputs and ensure low power consumption, and is widely used in energy management modules for high-power devices.
2. **Motor drive control systems**:
In motor drive applications that require high voltage support, the IRFBE30STRR-VB can handle larger voltage loads due to its high withstand voltage capability. It is suitable for use in industrial motors and high-voltage motor control modules, especially in some environments that require higher voltage and medium current handling.
3. **Grid infrastructure**:
For high-voltage switch applications in power grid systems, the IRFBE30STRR-VB can achieve efficient switch control in high voltage environments, reduce system power consumption and improve efficiency. It is often used in power management, substations and voltage regulation systems for smart grids.
4. **New Energy Systems**:
This MOSFET is also suitable for high-voltage control parts in new energy applications such as solar photovoltaic systems and wind energy conversion equipment. In these fields, the IRFBE30STRR-VB can efficiently handle high-voltage inputs to ensure system stability and high efficiency of energy conversion.
The high withstand voltage, stable switching performance and good heat dissipation characteristics of the IRFBE30STRR-VB MOSFET make it an ideal choice for high-voltage power supply and current control applications. It performs particularly well in environments that require reliability, stability and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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