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IRFBE30STRLPBF-VB Product details
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IRFBE30STRLPBF-VB MOSFET Product Introduction
IRFBE30STRLPBF-VB is a high-voltage N-channel power MOSFET in TO263 package, designed based on super junction multi-epitaxial technology (SJ_Multi-EPI Technology). With a maximum drain-source voltage of 800V and a maximum drain current of 7A, the device can maintain stable performance in high-voltage, high-power applications. Its on-resistance is 850mΩ@VGS=10V, which is suitable for applications that require high voltage handling but relatively low current. This MOSFET is designed mainly for high efficiency and high reliability, and is particularly suitable for use in power management and power conversion.
IRFBE30STRLPBF-VB is a high-voltage N-channel power MOSFET in TO263 package, designed based on super junction multi-epitaxial technology (SJ_Multi-EPI Technology). With a maximum drain-source voltage of 800V and a maximum drain current of 7A, the device can maintain stable performance in high-voltage, high-power applications. Its on-resistance is 850mΩ@VGS=10V, which is suitable for applications that require high voltage handling but relatively low current. This MOSFET is designed mainly for high efficiency and high reliability, and is particularly suitable for use in power management and power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IRFBE30STRLPBF-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 850mΩ@VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology type**: Super junction multi-epitaxial technology (SJ_Multi-EPI Technology)
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 850mΩ@VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology type**: Super junction multi-epitaxial technology (SJ_Multi-EPI Technology)
Domain and module applications：
Applicable fields and modules
1. **Industrial high-voltage power conversion**: With its drain-source voltage of up to 800V, the IRFBE30STRLPBF-VB is ideal for high-voltage power conversion applications such as industrial power systems, switch-mode power supplies (SMPS), and high-voltage DC converters. These systems usually need to handle high-voltage loads, and require MOSFETs with efficient and stable performance to reduce energy losses and improve overall system efficiency.
2. **Lighting drivers**: In lighting drivers that need to control high voltages, especially LED drivers or HID (high-intensity discharge lamp) drivers, the IRFBE30STRLPBF-VB can provide stable power management. Its high-voltage tolerance and low on-resistance make it an ideal choice for efficient lighting control systems.
3. **Power inverters**: In solar inverters and wind inverters, handling high-voltage DC is a very common requirement. The high voltage capability and reliable power conversion characteristics of the IRFBE30STRLPBF-VB make it an ideal choice for these applications, capable of effectively converting and managing power under high voltage conditions to ensure efficient operation of the inverter.
4. **Grid and Energy Management System**: This device is also widely used in grid control and energy management systems, especially in equipment that needs to manage high voltage and high energy, such as smart grids, UPS systems, and large energy storage systems. Its high voltage characteristics can ensure the stability and safety of power equipment in high voltage environments.
1. **Industrial high-voltage power conversion**: With its drain-source voltage of up to 800V, the IRFBE30STRLPBF-VB is ideal for high-voltage power conversion applications such as industrial power systems, switch-mode power supplies (SMPS), and high-voltage DC converters. These systems usually need to handle high-voltage loads, and require MOSFETs with efficient and stable performance to reduce energy losses and improve overall system efficiency.
2. **Lighting drivers**: In lighting drivers that need to control high voltages, especially LED drivers or HID (high-intensity discharge lamp) drivers, the IRFBE30STRLPBF-VB can provide stable power management. Its high-voltage tolerance and low on-resistance make it an ideal choice for efficient lighting control systems.
3. **Power inverters**: In solar inverters and wind inverters, handling high-voltage DC is a very common requirement. The high voltage capability and reliable power conversion characteristics of the IRFBE30STRLPBF-VB make it an ideal choice for these applications, capable of effectively converting and managing power under high voltage conditions to ensure efficient operation of the inverter.
4. **Grid and Energy Management System**: This device is also widely used in grid control and energy management systems, especially in equipment that needs to manage high voltage and high energy, such as smart grids, UPS systems, and large energy storage systems. Its high voltage characteristics can ensure the stability and safety of power equipment in high voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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