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IRFBE30SPBF-VB Product details

Product introduction:

Product Introduction: IRFBE30SPBF-VB

IRFBE30SPBF-VB is a high-voltage N-channel MOSFET with TO263 package and advanced SJ_Multi-EPI (super junction multi-epitaxial) technology. Its drain-source voltage (VDS) is as high as 800V, which can withstand extremely high voltage loads and is suitable for applications requiring high-voltage switching and control. Its on-resistance (RDS(ON)) is 850mΩ @ VGS = 10V, and it can handle up to 7A of continuous current while ensuring low losses. This MOSFET is particularly suitable for applications such as high-voltage inverters, switching power supplies and industrial power systems, providing stable high-voltage handling capabilities and reliable operating performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 800V 3.5V 7A 850mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 800V 3.5V 7A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 800V 3.5V 7A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description:
1. **Package type**: TO263
2. **Configuration**: Single N-channel MOSFET
3. **Drain-source voltage (VDS)**: 800V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 850mΩ @ VGS = 10V
7. **Continuous drain current (ID)**: 7A
8. **Working technology**: SJ_Multi-EPI (Superjunction Multi-Epi)
9. **Power dissipation (Pd)**: 200W
10. **Operating temperature range**: -55°C to 150°C
11. **Gate charge (Qg)**: 50nC (typical)
12. **Input capacitance (Ciss)**: 1400pF (typical value)

Domain and module applications:

Application fields and module examples:

1. **High-voltage switch mode power supply (SMPS)**: The high voltage tolerance and low conduction loss of IRFBE30SPBF-VB make it very suitable for high-voltage switch mode power supply applications. For example, it can be used in industrial-grade switch mode power supply systems (SMPS) to ensure efficient operation under high voltage input and output conditions.

2. **Solar inverter**: In applications such as solar inverters that need to handle high voltages, the 800V VDS capability and efficient switching performance of this MOSFET can help efficiently convert DC voltage to AC power, improving the overall performance and efficiency of the inverter.

3. **Electric vehicle power management**: The high voltage characteristics of IRFBE30SPBF-VB make it widely used in the power management system of electric vehicles. It can be used to manage battery charging systems and high-voltage conversion modules to optimize battery performance and ensure vehicle power stability.

4. **Industrial Motor Drive**: In high-voltage motor drive applications, such as large industrial motors and high-power inverters, the IRFBE30SPBF-VB can withstand 800V voltage and provide 7A current handling capability, providing efficient power conversion and control for industrial equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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