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IRFBE30LPBF-VB Product details
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IRFBE30LPBF-VB MOSFET Product Introduction:
**IRFBE30LPBF-VB** is a high voltage N-channel MOSFET that uses Trench technology and is packaged in a TO-262 package. With a drain-source voltage of **850V** and a drain current handling capability of **4.1A**, this MOSFET is ideal for high voltage and medium current applications. Its low on-resistance enables it to perform well in applications that require high efficiency and low power consumption, especially in high voltage power management and power conversion systems.
**IRFBE30LPBF-VB** is a high voltage N-channel MOSFET that uses Trench technology and is packaged in a TO-262 package. With a drain-source voltage of **850V** and a drain current handling capability of **4.1A**, this MOSFET is ideal for high voltage and medium current applications. Its low on-resistance enables it to perform well in applications that require high efficiency and low power consumption, especially in high voltage power management and power conversion systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 850V | 3.5V | 4.1A | 2700mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 850V | 3.5V | 4.1A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 850V | 3.5V | 4.1A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description:
- **Package**: TO-262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 850V
The maximum voltage between the drain and source that the MOSFET can withstand, suitable for high voltage environments.
- **Gate-source voltage (VGS)**: ±30V
The maximum voltage between the gate and the source, ensuring that the device operates within a safe range.
- **Threshold voltage (Vth)**: 3.5V
The minimum gate voltage required to turn on the MOSFET, ensuring that the device conducts stably under the control voltage.
- **On-state resistance (RDS(ON))**: 2700mΩ @ VGS = 10V
The resistance between the drain and the source when the MOSFET is fully turned on, providing moderate power consumption and high current handling capability.
- **Drain Current (ID)**: 4.1A
Maximum current that the MOSFET can continuously handle, suitable for medium current applications.
- **Technology**: Trench
Adopts Trench technology to provide lower on-resistance and higher efficiency.
- **Package**: TO-262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 850V
The maximum voltage between the drain and source that the MOSFET can withstand, suitable for high voltage environments.
- **Gate-source voltage (VGS)**: ±30V
The maximum voltage between the gate and the source, ensuring that the device operates within a safe range.
- **Threshold voltage (Vth)**: 3.5V
The minimum gate voltage required to turn on the MOSFET, ensuring that the device conducts stably under the control voltage.
- **On-state resistance (RDS(ON))**: 2700mΩ @ VGS = 10V
The resistance between the drain and the source when the MOSFET is fully turned on, providing moderate power consumption and high current handling capability.
- **Drain Current (ID)**: 4.1A
Maximum current that the MOSFET can continuously handle, suitable for medium current applications.
- **Technology**: Trench
Adopts Trench technology to provide lower on-resistance and higher efficiency.
Domain and module applications：
Application Examples:
1. **High Voltage Switching Power Supply**:
IRFBE30LPBF-VB excels in high voltage switching power supplies (SMPS), and its **850V** drain-source voltage enables it to handle high voltage inputs. It is suitable for switching and regulation functions in high voltage power management systems to optimize power conversion efficiency.
2. **High Voltage Motor Driver**:
In high voltage motor drive applications, such as electric vehicles and industrial motor control, the IRFBE30LPBF-VB can reliably control the starting and operation of high voltage motors. Its high voltage withstand capability and medium current handling capability make it suitable for use in these applications.
3. **High Voltage Inverter**:
IRFBE30LPBF-VB is suitable for high voltage power inverters, such as solar inverters or industrial inverters. Its high voltage withstand capability and low on-state resistance ensure high efficiency and stability of power conversion.
4. **High voltage protection circuit**:
Due to its high voltage tolerance, this MOSFET is suitable for high voltage protection circuits, such as overvoltage protection devices or high voltage fuses. In these applications, it can protect the circuit from overvoltage and ensure the safe operation of the system.
The high voltage tolerance, moderate current handling capability and Trench technology of IRFBE30LPBF-VB enable it to perform well in various high voltage applications, meeting the needs of high power and high efficiency.
1. **High Voltage Switching Power Supply**:
IRFBE30LPBF-VB excels in high voltage switching power supplies (SMPS), and its **850V** drain-source voltage enables it to handle high voltage inputs. It is suitable for switching and regulation functions in high voltage power management systems to optimize power conversion efficiency.
2. **High Voltage Motor Driver**:
In high voltage motor drive applications, such as electric vehicles and industrial motor control, the IRFBE30LPBF-VB can reliably control the starting and operation of high voltage motors. Its high voltage withstand capability and medium current handling capability make it suitable for use in these applications.
3. **High Voltage Inverter**:
IRFBE30LPBF-VB is suitable for high voltage power inverters, such as solar inverters or industrial inverters. Its high voltage withstand capability and low on-state resistance ensure high efficiency and stability of power conversion.
4. **High voltage protection circuit**:
Due to its high voltage tolerance, this MOSFET is suitable for high voltage protection circuits, such as overvoltage protection devices or high voltage fuses. In these applications, it can protect the circuit from overvoltage and ensure the safe operation of the system.
The high voltage tolerance, moderate current handling capability and Trench technology of IRFBE30LPBF-VB enable it to perform well in various high voltage applications, meeting the needs of high power and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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