Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
8A |
|
|
780mΩ |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
8A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
8A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: TO220
TO220 package provides excellent heat dissipation and high current carrying capacity, suitable for high power and high voltage applications.
2. **Configuration**: Single N-channel
Single N-channel MOSFET is suitable for low-side switch applications and is easy to integrate into various power circuits.
3. **Drain-source voltage (VDS)**: 600V
Can handle drain-source voltages up to 600V, suitable for high voltage applications such as high voltage power supplies and converters.
4. **Gate-source voltage (VGS)**: ±30V
Supports gate-source voltages up to 30V to ensure stable operation of the MOSFET during switching.
5. **Threshold Voltage (Vth)**: 3.5V
The threshold voltage of 3.5V enables the MOSFET to be driven by logic level signals, suitable for low-level control systems.
6. **RDS(ON)**:
- **1070mΩ @ VGS = 4.5V**
- **780mΩ @ VGS = 10V**
Higher on-resistance at different gate-source voltages may result in higher conduction losses.
7. **Maximum Drain Current (ID)**: 8A
Up to 8A current carrying capability, suitable for medium current load applications.
8. **Technology**: Planar
Planar technology is a mature manufacturing process that ensures the stability and reliability of MOSFETs in high voltage applications.
Domain and module applications：
Application Examples
1. **High Voltage Switching Power Supplies**
The IRFBC40LC-VB MOSFET is suitable for **high voltage switching power supplies**, such as high voltage DC-DC converters and switch mode power supplies (SMPS). Although its on-resistance is high, its high voltage capability makes it stable in applications that require high voltage switching.
2. **High Voltage Inverters**
In **high voltage inverters**, such as those used in solar systems and industrial inverters, the high voltage handling capability and high current carrying capacity of the IRFBC40LC-VB enable it to safely and efficiently handle high voltage and medium current loads.
3. **Power Protection Circuits**
This MOSFET can be used in **power protection circuits**, especially in application scenarios where the circuit needs to be protected from high voltage overloads. Its high voltage tolerance enables it to operate in environments with large voltage fluctuations.
4. **High-voltage converters and regulators**
IRFBC40LC-VB is suitable for **high-voltage converters** and **high-voltage regulators** to handle high-voltage loads and provide reliable switching control, especially in applications with high voltage and current requirements.
IRFBC40LC-VB MOSFET is widely used in **high-voltage switching power supplies**, **high-voltage inverters**, **power protection circuits** and **high-voltage converters** with its high voltage capability and medium current handling capability, providing a reliable solution for high voltage and medium current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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