Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
70A |
|
|
17mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
70A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
70A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: TO220
TO220 package design provides excellent heat dissipation and high current carrying capacity, suitable for high power and high current applications.
2. **Configuration**: Single N-channel
Single N-channel MOSFET is suitable for low-side switch applications and is easy to integrate into various power circuits.
3. **Drain-source voltage (VDS)**: 100V
Can handle drain-source voltages up to 100V, suitable for medium and high voltage applications.
4. **Gate-source voltage (VGS)**: ±20V
Supports gate-source voltages up to 20V to ensure the stability of the MOSFET in switching operations.
5. **Threshold voltage (Vth)**: 1.8V
The threshold voltage of 1.8V allows the MOSFET to be driven by low-level logic signals, suitable for low-level control systems.
6. **RDS(ON)**:
- **17mΩ @ VGS = 10V**
With 17mΩ on-resistance at 10V gate-source voltage, it effectively reduces conduction losses and improves overall system efficiency.
7. **Maximum Drain Current (ID)**: 70A
Up to 70A current carrying capability makes it suitable for high power applications and high current loads.
8. **Technology**: Trench Technology
Trench technology optimizes switching speed and low gate charge, improving MOSFET efficiency and performance.
Domain and module applications：
Application Examples
1. **High Power Power Management**
The IRFB59N10DPBF-VB MOSFET is ideal for **high power DC-DC converters** and **switch mode power supplies (SMPS)**. Its high current and low RDS(ON) characteristics ensure efficient operation and reduce energy loss in power conversion.
2. **Motor Drive**
In **motor drive** systems such as industrial motor control and electric vehicles, the IRFB59N10DPBF-VB is able to handle high voltage and high current loads, provide reliable switching control, and improve motor performance.
3. **Inverters and Energy Systems**
This MOSFET is suitable for **solar inverters** and **energy management systems**, especially in applications requiring high voltage and high current. Its efficient switching performance and low on-resistance help improve energy conversion efficiency.
4. **Power management module**
IRFB59N10DPBF-VB is also suitable for various **power management modules**, such as battery management systems and power distribution networks, to meet the needs of high current handling and low conduction loss.
IRFB59N10DPBF-VB MOSFET is widely used in **power management**, **motor drive**, **energy system** and **power management** with its high current, high voltage and low on-resistance characteristics, providing efficient and reliable solutions for various high power and high current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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