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IRFB4510PBF-VB Product details

Product introduction:

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The IRFB4510PBF-VB is a high-performance N-channel MOSFET designed for power applications that require high current handling and low on-resistance. With a drain-source voltage (VDS) of **100V** and a maximum continuous drain current (ID) of **100A**, it is suitable for high-power switching applications. Using **Trench technology**, this MOSFET has an RDS(ON) of 9mΩ** at **VGS = 10V** and an RDS(ON) of 20mΩ** at **VGS = 4.5V**, which helps reduce power losses and improve system efficiency. Its **gate-source voltage (VGS) of ±20V** provides flexible control options, while its **threshold voltage (Vth) of 2.5V** ensures reliable switching characteristics.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 2.5V 100A 9mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 2.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 2.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N

### **Detailed parameter description:**

- **Model:** IRFB4510PBF-VB
- **Package:** TO220 (through-hole package)
- **Channel configuration:** Single N-channel
- **Technology:** Trench
- **VDS (drain-source voltage):** 100V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** 2.5V
- **RDS(ON) (on-resistance):**
- 20mΩ @ VGS = 4.5V
- 9mΩ @ VGS = 10V
- **ID (maximum continuous leakage current):** 100A
- **Ptot (total power consumption):** 320W (typical value)
- **Qg (total gate charge):** 260nC
- **Rise time (tr):** 180ns
- **Fall time (tf):** 110ns
- **Operating temperature range:** -55°C to 175°C

Domain and module applications:



1. **Power Converters: **
The IRFB4510PBF-VB MOSFET is ideal for **power converters** such as **switching power supplies (SMPS)** and **DC-DC converters** due to its high current handling capability (100A) and low on-resistance (9mΩ @ VGS = 10V). Its excellent conduction performance and low power loss make it an ideal choice for these high-power applications, helping to improve overall system efficiency.

2. **Motor Drive Systems: **
In **electric vehicle motor controllers** or **industrial motor drive** systems, this MOSFET can effectively handle high currents and is suitable for **H-bridge circuits**. Its stable switching characteristics and high current handling capability ensure reliability and high efficiency in complex motor control applications.

3. **Battery Management Systems (BMS): **
The IRFB4510PBF-VB can be used in **lithium-ion battery management systems** such as **electric vehicles (EVs)** and **energy storage systems**. Its high current capability and low RDS(ON) help reduce energy loss during battery charging and discharging, thereby improving the overall efficiency and performance of the system.

4. **Inverter: **
Due to its low RDS(ON) and high current handling capability, this MOSFET is suitable for **solar inverter** or **uninterruptible power supply (UPS)**. It can reduce energy loss and improve power conversion efficiency during the process of converting DC power to AC power.

5. **High-power audio amplifier: **
In **high-power Class D audio amplifier**, IRFB4510PBF-VB can cope with the high power and fast switching requirements to help achieve efficient audio amplification. Its low switching loss and high efficiency performance are crucial to reduce heat generation and improve the stability of audio systems.

Overall, the IRFB4510PBF-VB MOSFET is widely used in power conversion, motor control, battery management and high-power audio amplification due to its high current handling capability, low on-resistance and Trench technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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