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IRFB3507PBF-VB Product details

Product introduction:

Product Introduction

**IRFB3507PBF-VB** is a high-performance N-channel MOSFET in TO220 package, designed for applications requiring high current and low on-resistance. Its key features include 80V drain-source voltage (VDS), maximum 20V gate-source voltage (VGS), and low on-resistance (RDS(ON)) of 7mΩ, making it excellent in high-efficiency power switching and power management applications. The technology of this MOSFET is based on the advanced Trench process, providing excellent switching performance and high temperature stability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 80V 3V 100A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Model**: IRFB3507PBF-VB
- **Package**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench

Domain and module applications:

Application fields and module examples

1. **Power management**: In switch mode power supplies (SMPS) and DC-DC converters, the IRFB3507PBF-VB can significantly improve energy efficiency and reduce power consumption due to its low RDS(ON) and high current carrying capacity. It is suitable for power modules that require high switching frequency and high load capacity, providing stable current conversion and power protection.

2. **Electric vehicles**: In the drive system of electric vehicles, the high current capability of the IRFB3507PBF-VB makes it suitable as a switching element for motor drive and battery management systems. Its low on-resistance helps improve overall system efficiency and reduce heat generation, extending the service life of batteries and motors.

3. **Battery charger**: In smart battery chargers, this MOSFET is used to achieve efficient switching control. Due to its low RDS(ON), it can effectively manage the current flow during battery charging, reduce power consumption and heat, and improve charging efficiency and equipment safety.

4. **High-frequency switching circuit**: IRFB3507PBF-VB performs well in high-frequency switching applications and is suitable for applications that require fast switching and high current loads, such as RF power amplifiers and high-frequency power supply circuits. Its low on-resistance and high switching speed help optimize overall system performance.

Using IRFB3507PBF-VB in these fields and modules can give full play to its advantages in high current handling and low power consumption operation, and improve system efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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