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IRF9Z34SPBF-VB Product details
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Product Introduction
**IRF9Z34SPBF-VB** is a P-channel MOSFET in TO263 package, designed for high current and high voltage applications. It uses Trench technology to provide low on-resistance and excellent switching performance, and can withstand drain-source voltages up to -60V. This MOSFET is suitable for a variety of power management and switch control applications, and can provide stable and reliable performance under high voltage and high current conditions.
**IRF9Z34SPBF-VB** is a P-channel MOSFET in TO263 package, designed for high current and high voltage applications. It uses Trench technology to provide low on-resistance and excellent switching performance, and can withstand drain-source voltages up to -60V. This MOSFET is suitable for a variety of power management and switch control applications, and can provide stable and reliable performance under high voltage and high current conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | 64mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Model**: IRF9Z34SPBF-VB
- **Package**: TO263
- **Configuration**: Single-P-Channel
- **Drain-Source Voltage (VDS)**: -60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 77mΩ @ VGS = 4.5V
- 64mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -30A
- **Technology**: Trench
- **Model**: IRF9Z34SPBF-VB
- **Package**: TO263
- **Configuration**: Single-P-Channel
- **Drain-Source Voltage (VDS)**: -60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 77mΩ @ VGS = 4.5V
- 64mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -30A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**: IRF9Z34SPBF-VB is suitable for power management modules such as power switching and power distribution. Its high current handling capability and low on-resistance enable it to effectively manage power flow and improve the efficiency and stability of the power system.
2. **DC-DC converter**: In a DC-DC converter, this MOSFET can be used as a switch control part. Its high current carrying capacity and low on-resistance help reduce power loss and improve conversion efficiency, making it suitable for high-efficiency power supply design.
3. **Load switch**: IRF9Z34SPBF-VB can be used as a load switch and is widely used in home appliances and industrial equipment. Its high current capability and low on-resistance ensure the reliability and efficiency of the load switch, which is suitable for various control circuits and equipment protection.
4. **Power amplifier**: In power amplifier design, this MOSFET can be used for signal amplification and power management. Its low on-resistance and high current handling capability can effectively improve the efficiency and stability of power amplifiers, making it suitable for high-power applications.
5. **Electric Vehicles and Energy Systems**: In electric vehicles and other energy management systems, the IRF9Z34SPBF-VB can be used for battery management and motor drive systems. Its high current carrying capacity and high voltage resistance ensure reliable operation and high performance under harsh conditions.
These application areas demonstrate the wide applicability of the IRF9Z34SPBF-VB in high current and high voltage environments, especially in power switch applications that require high efficiency and high reliability.
1. **Power management**: IRF9Z34SPBF-VB is suitable for power management modules such as power switching and power distribution. Its high current handling capability and low on-resistance enable it to effectively manage power flow and improve the efficiency and stability of the power system.
2. **DC-DC converter**: In a DC-DC converter, this MOSFET can be used as a switch control part. Its high current carrying capacity and low on-resistance help reduce power loss and improve conversion efficiency, making it suitable for high-efficiency power supply design.
3. **Load switch**: IRF9Z34SPBF-VB can be used as a load switch and is widely used in home appliances and industrial equipment. Its high current capability and low on-resistance ensure the reliability and efficiency of the load switch, which is suitable for various control circuits and equipment protection.
4. **Power amplifier**: In power amplifier design, this MOSFET can be used for signal amplification and power management. Its low on-resistance and high current handling capability can effectively improve the efficiency and stability of power amplifiers, making it suitable for high-power applications.
5. **Electric Vehicles and Energy Systems**: In electric vehicles and other energy management systems, the IRF9Z34SPBF-VB can be used for battery management and motor drive systems. Its high current carrying capacity and high voltage resistance ensure reliable operation and high performance under harsh conditions.
These application areas demonstrate the wide applicability of the IRF9Z34SPBF-VB in high current and high voltage environments, especially in power switch applications that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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