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IRF9Z34NL-VB Product details
Back to previous pageProduct introduction：
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The IRF9Z34NL-VB is a high-performance P-channel MOSFET in a TO262 package. This MOSFET can withstand drain-source voltages (VDS) up to -60V and gate drive voltages (VGS) of ±20V, making it ideal for use in high-voltage environments. The gate threshold voltage (Vth) of the IRF9Z34NL-VB is -2V, ensuring that it can start up at lower gate voltages. Its on-resistance (RDS(ON)) is 16mΩ at VGS = 10V, providing low power consumption and efficient switching performance. Using advanced Trench technology, this MOSFET has excellent current handling capabilities and efficient thermal management performance.
**
The IRF9Z34NL-VB is a high-performance P-channel MOSFET in a TO262 package. This MOSFET can withstand drain-source voltages (VDS) up to -60V and gate drive voltages (VGS) of ±20V, making it ideal for use in high-voltage environments. The gate threshold voltage (Vth) of the IRF9Z34NL-VB is -2V, ensuring that it can start up at lower gate voltages. Its on-resistance (RDS(ON)) is 16mΩ at VGS = 10V, providing low power consumption and efficient switching performance. Using advanced Trench technology, this MOSFET has excellent current handling capabilities and efficient thermal management performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-P | -60V | -2V | -53A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-P | -60V | -2V | -53A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-P | -60V | -2V | -53A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-P |
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- **Package**: TO262
- **Configuration**: Single P-channel
- **Drain-Source Voltage (VDS)**: -60V
- **Gate Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: -2V
- **On-Resistance (RDS(ON))**:
- 16mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -53A
- **Technology**: Trench
- **Operating Temperature Range**: -55°C to 150°C
- **Package Features**: The TO262 package provides good heat dissipation performance and is suitable for high power applications.
**
- **Package**: TO262
- **Configuration**: Single P-channel
- **Drain-Source Voltage (VDS)**: -60V
- **Gate Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: -2V
- **On-Resistance (RDS(ON))**:
- 16mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -53A
- **Technology**: Trench
- **Operating Temperature Range**: -55°C to 150°C
- **Package Features**: The TO262 package provides good heat dissipation performance and is suitable for high power applications.
**
Domain and module applications：
**
1. **High Current Power Switch**
The IRF9Z34NL-VB is suitable for high current power switching applications. It can withstand voltages up to -60V and currents up to 53A, making it ideal for power adapters, power converters, and high power load switching. Its low on-resistance (16mΩ) helps reduce power dissipation and improve switching efficiency.
2. **Battery Management System**
In a battery management system, this MOSFET can be used as a battery switch and protection function. Its high current handling capability enables it to effectively manage and protect the battery pack from overcurrent and overvoltage while ensuring system reliability and efficiency.
3. **Power Amplifier Power Management**
The IRF9Z34NL-VB is ideal for power amplifier power management, especially in applications that require high current and high voltage, such as audio amplifiers and RF amplifiers. Its low on-resistance and high current handling capability ensure stable and efficient operation of the amplifier.
4. **Industrial Load Switch**
This MOSFET is suitable for industrial load switching applications such as motor drive and high-power load control. Due to its ability to handle high voltage and high current, the IRF9Z34NL-VB can provide reliable switching operation and stable performance for a variety of industrial equipment and systems.
1. **High Current Power Switch**
The IRF9Z34NL-VB is suitable for high current power switching applications. It can withstand voltages up to -60V and currents up to 53A, making it ideal for power adapters, power converters, and high power load switching. Its low on-resistance (16mΩ) helps reduce power dissipation and improve switching efficiency.
2. **Battery Management System**
In a battery management system, this MOSFET can be used as a battery switch and protection function. Its high current handling capability enables it to effectively manage and protect the battery pack from overcurrent and overvoltage while ensuring system reliability and efficiency.
3. **Power Amplifier Power Management**
The IRF9Z34NL-VB is ideal for power amplifier power management, especially in applications that require high current and high voltage, such as audio amplifiers and RF amplifiers. Its low on-resistance and high current handling capability ensure stable and efficient operation of the amplifier.
4. **Industrial Load Switch**
This MOSFET is suitable for industrial load switching applications such as motor drive and high-power load control. Due to its ability to handle high voltage and high current, the IRF9Z34NL-VB can provide reliable switching operation and stable performance for a variety of industrial equipment and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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