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IRF9Z34LPBF-VB Product details
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IRF9Z34LPBF-VB MOSFET Product Introduction
IRF9Z34LPBF-VB is a high-performance single P-channel power MOSFET in TO262 package, designed for high current and high voltage switching applications. The drain-source voltage (VDS) of this MOSFET is -60V, which is suitable for use in negative voltage environments. Its gate-source voltage (VGS) range is ±20V, and the turn-on threshold voltage (Vth) is -2V, ensuring stable turn-on at lower gate voltages. The on-resistance (RDS(ON)) of IRF9Z34LPBF-VB is 16mΩ at VGS of 10V, and it can handle drain currents up to -53A. The use of Trench technology gives it excellent electrical performance and low power consumption, making it ideal for switching applications requiring high efficiency and high current.
IRF9Z34LPBF-VB is a high-performance single P-channel power MOSFET in TO262 package, designed for high current and high voltage switching applications. The drain-source voltage (VDS) of this MOSFET is -60V, which is suitable for use in negative voltage environments. Its gate-source voltage (VGS) range is ±20V, and the turn-on threshold voltage (Vth) is -2V, ensuring stable turn-on at lower gate voltages. The on-resistance (RDS(ON)) of IRF9Z34LPBF-VB is 16mΩ at VGS of 10V, and it can handle drain currents up to -53A. The use of Trench technology gives it excellent electrical performance and low power consumption, making it ideal for switching applications requiring high efficiency and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-P | -60V | -2V | -53A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-P | -60V | -2V | -53A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-P | -60V | -2V | -53A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-P |
IRF9Z34LPBF-VB Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 16mΩ @ VGS = 10V
- **Drain current (ID)**: -53A
- **Technology type**: Trench technology
- **Package type**: TO262
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 16mΩ @ VGS = 10V
- **Drain current (ID)**: -53A
- **Technology type**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**: IRF9Z34LPBF-VB is suitable for high-side switches in power management systems due to its high current and low on-resistance. It can effectively control the switching of power, reduce energy consumption, and improve the efficiency of the system. It is widely used in power converters and voltage regulators.
2. **Motor control**: In motor drive systems, IRF9Z34LPBF-VB can be used as a high-side switch to control the start and stop of the motor. Its high current capability and low on-resistance make it suitable for high-power motor drive applications such as industrial motors and power tools.
3. **High power inverter**: IRF9Z34LPBF-VB is suitable for switching operations in high-power inverters. Its high current handling capability and low on-resistance help improve the efficiency of the inverter and ensure efficient operation during power conversion, especially in solar inverters and high-power power modules.
4. **Battery Management System**: In the battery management system, this MOSFET can be used as a battery protection switch to prevent overcurrent and overvoltage. Its high current capability and reliable switching performance ensure the safety and long life of the battery system, and is suitable for high-voltage battery packs and battery protection circuits.
The high current capability, low on-resistance, and excellent switching characteristics of the IRF9Z34LPBF-VB enable it to excel in multiple high-current and high-voltage applications, providing an efficient and reliable solution.
1. **Power management**: IRF9Z34LPBF-VB is suitable for high-side switches in power management systems due to its high current and low on-resistance. It can effectively control the switching of power, reduce energy consumption, and improve the efficiency of the system. It is widely used in power converters and voltage regulators.
2. **Motor control**: In motor drive systems, IRF9Z34LPBF-VB can be used as a high-side switch to control the start and stop of the motor. Its high current capability and low on-resistance make it suitable for high-power motor drive applications such as industrial motors and power tools.
3. **High power inverter**: IRF9Z34LPBF-VB is suitable for switching operations in high-power inverters. Its high current handling capability and low on-resistance help improve the efficiency of the inverter and ensure efficient operation during power conversion, especially in solar inverters and high-power power modules.
4. **Battery Management System**: In the battery management system, this MOSFET can be used as a battery protection switch to prevent overcurrent and overvoltage. Its high current capability and reliable switching performance ensure the safety and long life of the battery system, and is suitable for high-voltage battery packs and battery protection circuits.
The high current capability, low on-resistance, and excellent switching characteristics of the IRF9Z34LPBF-VB enable it to excel in multiple high-current and high-voltage applications, providing an efficient and reliable solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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