Product introduction：
Product Introduction - IRF9Z32-VB
IRF9Z32-VB is a single P-channel enhancement-mode power MOSFET in a TO-220 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) reaches -60V, capable of handling higher voltage applications. The threshold voltage (Vth) of this MOSFET is -1.7V, and it uses advanced Trench technology to provide low on-resistance and excellent switching performance. At VGS=4.5V, its on-resistance (RDS(ON)) is 74mΩ, and at VGS=10V it is 62mΩ. IRF9Z32-VB can support a maximum drain current (ID) of -40A, giving it excellent performance and reliability in high current applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-P |
-60V |
|
-1.7V |
-40A |
|
|
62mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-P |
-60V |
|
-1.7V |
-40A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-P |
-60V |
|
-1.7V |
-40A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-P |
|
|
|
|
|
|
|
Parameter description
- **Model**: IRF9Z32-VB
- **Package**: TO220
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 74mΩ @ VGS=4.5V
- 62mΩ @ VGS=10V
- **Maximum drain current (ID)**: -40A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management**: The IRF9Z32-VB is suitable for use as a switching element in high-voltage power management systems. In DC-DC converters and power modules, this MOSFET can provide efficient switching performance, reduce power consumption and improve the overall efficiency of the system.
2. **Battery protection**: In battery management systems, the high current and low on-resistance characteristics of this MOSFET make it an ideal choice for battery protection circuits. It can effectively manage the battery charging and discharging process, prevent overvoltage and overcurrent conditions, and improve battery safety and service life.
3. **Load switch**: The high current carrying capacity of the IRF9Z32-VB makes it suitable for load switch applications. For example, it can be used as a load switch in various industrial equipment and consumer electronics to ensure stable operation under high load conditions.
4. **Motor drive**: Due to its high current handling capability, the IRF9Z32-VB is also suitable for use in motor drive circuits. It can provide stable switching control in high current and high voltage environments for driving motors and other high power loads.
The high voltage withstand capability and low on-resistance of IRF9Z32-VB make it perform well in high current and high voltage applications, and it is an indispensable high-efficiency switching and control component in modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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