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IRF9Z24STRR-VB Product details
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IRF9Z24STRR-VB MOSFET Product Introduction:
IRF9Z24STRR-VB is a high-performance P-channel power MOSFET in TO263 package, designed for medium-to-high voltage and high-current switching applications. The drain-source voltage (VDS) of this MOSFET is -60V, which is suitable for handling medium voltage loads. Its gate-source voltage (VGS) range is ±20V, ensuring stable operation under various gate voltages. The threshold voltage (Vth) of IRF9Z24STRR-VB is -1.7V, which means that when the gate voltage reaches -1.7V, the MOSFET will start to turn on. Its on-resistance (RDS(ON)) is 77mΩ at VGS of 4.5V and 64mΩ at VGS of 10V, showing a lower on-resistance and effectively improving switching efficiency. The maximum leakage current (ID) is -30A. It uses Trench technology to provide excellent switching performance and conductive performance, and is suitable for high current and medium voltage applications.
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IRF9Z24STRR-VB is a high-performance P-channel power MOSFET in TO263 package, designed for medium-to-high voltage and high-current switching applications. The drain-source voltage (VDS) of this MOSFET is -60V, which is suitable for handling medium voltage loads. Its gate-source voltage (VGS) range is ±20V, ensuring stable operation under various gate voltages. The threshold voltage (Vth) of IRF9Z24STRR-VB is -1.7V, which means that when the gate voltage reaches -1.7V, the MOSFET will start to turn on. Its on-resistance (RDS(ON)) is 77mΩ at VGS of 4.5V and 64mΩ at VGS of 10V, showing a lower on-resistance and effectively improving switching efficiency. The maximum leakage current (ID) is -30A. It uses Trench technology to provide excellent switching performance and conductive performance, and is suitable for high current and medium voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | 64mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description:
- **Package**: TO263, suitable for high power applications, with good thermal management capabilities.
- **Configuration**: Unipolar P-channel MOSFET, suitable for load switching and power management.
- **VDS (drain-source voltage)**: -60V, capable of handling medium voltage loads.
- **VGS (gate-source voltage)**: ±20V, supporting a variety of gate drive voltages.
- **Vth (threshold voltage)**: -1.7V, indicating the minimum gate voltage at which the MOSFET starts to turn on.
- **RDS(ON)**:
- 77mΩ @ VGS = 4.5V, suitable for lower gate voltage applications.
- 64mΩ @ VGS = 10V, further reducing on-resistance and improving switching efficiency.
- **ID (leakage current)**: -30A, suitable for applications handling medium currents.
- **Technology**: Trench technology provides lower on-resistance and higher switching efficiency.
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- **Package**: TO263, suitable for high power applications, with good thermal management capabilities.
- **Configuration**: Unipolar P-channel MOSFET, suitable for load switching and power management.
- **VDS (drain-source voltage)**: -60V, capable of handling medium voltage loads.
- **VGS (gate-source voltage)**: ±20V, supporting a variety of gate drive voltages.
- **Vth (threshold voltage)**: -1.7V, indicating the minimum gate voltage at which the MOSFET starts to turn on.
- **RDS(ON)**:
- 77mΩ @ VGS = 4.5V, suitable for lower gate voltage applications.
- 64mΩ @ VGS = 10V, further reducing on-resistance and improving switching efficiency.
- **ID (leakage current)**: -30A, suitable for applications handling medium currents.
- **Technology**: Trench technology provides lower on-resistance and higher switching efficiency.
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Domain and module applications：
Application areas and module examples:
1. **Power management**: IRF9Z24STRR-VB performs well in power management systems, such as DC-DC converters and power regulators. Its medium drain-source voltage and high current capability make it suitable for power modules, adapters and battery management systems to provide stable power control.
2. **Load switch**: In load switch applications, this MOSFET can be used to control various electrical loads, such as motors, lights or other electrical devices. Its low on-resistance and high current carrying capacity make it perform well when handling high current loads, and it is widely used in industrial control, home appliances and other load control systems.
3. **Motor drive**: IRF9Z24STRR-VB is suitable for motor drive circuits, especially in high current motor control systems. Its high current carrying capacity and moderate voltage tolerance ensure stable switching performance during motor startup and operation, and is suitable for use in motor drives and automation equipment.
4. **Inverter design**: In inverter design, the medium voltage characteristics and high current handling capability of the IRF9Z24STRR-VB make it an ideal switching element. It can efficiently handle the current in the inverter and is suitable for solar inverters and other power conversion applications to provide efficient power conversion.
5. **Battery protection circuit**: This MOSFET is also suitable for battery protection circuits to control the charging and discharging process of the battery. Its high current handling capability and low on-resistance can effectively prevent the battery from overcharging, over-discharging or short-circuiting, ensuring the safety and reliability of the battery system.
The medium voltage carrying capability and high current handling capability of the IRF9Z24STRR-VB make it excellent in applications such as power management, load control and power conversion, and is suitable for various circuit designs that require efficient and reliable switching.
1. **Power management**: IRF9Z24STRR-VB performs well in power management systems, such as DC-DC converters and power regulators. Its medium drain-source voltage and high current capability make it suitable for power modules, adapters and battery management systems to provide stable power control.
2. **Load switch**: In load switch applications, this MOSFET can be used to control various electrical loads, such as motors, lights or other electrical devices. Its low on-resistance and high current carrying capacity make it perform well when handling high current loads, and it is widely used in industrial control, home appliances and other load control systems.
3. **Motor drive**: IRF9Z24STRR-VB is suitable for motor drive circuits, especially in high current motor control systems. Its high current carrying capacity and moderate voltage tolerance ensure stable switching performance during motor startup and operation, and is suitable for use in motor drives and automation equipment.
4. **Inverter design**: In inverter design, the medium voltage characteristics and high current handling capability of the IRF9Z24STRR-VB make it an ideal switching element. It can efficiently handle the current in the inverter and is suitable for solar inverters and other power conversion applications to provide efficient power conversion.
5. **Battery protection circuit**: This MOSFET is also suitable for battery protection circuits to control the charging and discharging process of the battery. Its high current handling capability and low on-resistance can effectively prevent the battery from overcharging, over-discharging or short-circuiting, ensuring the safety and reliability of the battery system.
The medium voltage carrying capability and high current handling capability of the IRF9Z24STRR-VB make it excellent in applications such as power management, load control and power conversion, and is suitable for various circuit designs that require efficient and reliable switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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