IRF9Z24STRLPBF-VB Product details
Product introduction:
IRF9Z24STRLPBF-VB is a high-performance P-channel MOSFET in TO263 package, designed for medium power and medium current applications. Its drain-source voltage (VDS) can withstand up to -60V, and the gate-source voltage (VGS) range is ±20V. The gate threshold voltage of this MOSFET is -1.7V, and the on-resistance is 77mΩ at a gate voltage of 4.5V and 64mΩ at 10V. The maximum drain current is -30A, which is suitable for applications under medium load conditions. IRF9Z24STRLPBF-VB uses Trench technology to improve switching efficiency and reduce on-resistance, thereby improving overall performance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | 64mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
- **Package type**: TO263
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 77mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 64mΩ @ VGS=10V
- **Drain current (ID)**: -30A
- **Operating temperature range**: -55°C to 150°C
- **Technology**: Trench technology
- **Power dissipation**: 62W (max)
Domain and module applications:
1. **Power Switch**: IRF9Z24STRLPBF-VB is suitable for power switch applications, especially in power systems that need to handle medium voltage and current. Its low on-resistance can effectively reduce switching losses and improve the efficiency of the overall system.
2. **Battery Management**: In battery protection systems, IRF9Z24STRLPBF-VB can provide efficient switching functions to protect batteries from overcurrent and overvoltage. It can stably control the flow of current during battery charging and discharging, improving the safety and life of the battery.
3. **Power Amplifier**: In power amplifier applications, this MOSFET can be used as a switch or load element to handle medium current and voltage. Its high current handling capability and low on-resistance ensure stable operation and efficient performance of the power amplifier.
4. **Motor drive**: In motor drive systems, the IRF9Z24STRLPBF-VB is able to handle medium current loads in motor control, provide reliable switching functions, and ensure stable operation and control of the motor.
5. **High power switching applications**: Suitable for a variety of high power switching applications, such as power converters and high power supply protection circuits. Its excellent switching performance and high current handling capability make it an ideal choice for high power applications.
The medium current and voltage handling capabilities and low on-resistance of the IRF9Z24STRLPBF-VB make it excellent in power switching, battery management, power amplification, motor drive and other fields, providing efficient and reliable solutions.
Technical support:
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