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IRF9Z24SPBF-VB Product details
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IRF9Z24SPBF-VB Product Introduction
IRF9Z24SPBF-VB is a high current P-channel power MOSFET in TO263 package. Designed for medium and high voltage applications, this MOSFET has a drain-source breakdown voltage (VDS) of -60V and a gate-source voltage (VGS) of ±20V, making it suitable for power switching and power regulation. Its threshold voltage (Vth) is -1.7V, and its on-resistance (RDS(ON)) is 77mΩ at VGS=4.5V and 64mΩ at VGS=10V. The maximum drain current (ID) is -30A. IRF9Z24SPBF-VB uses Trench technology to provide low conduction loss and good switching performance, making it suitable for circuits requiring high current and high efficiency.
IRF9Z24SPBF-VB is a high current P-channel power MOSFET in TO263 package. Designed for medium and high voltage applications, this MOSFET has a drain-source breakdown voltage (VDS) of -60V and a gate-source voltage (VGS) of ±20V, making it suitable for power switching and power regulation. Its threshold voltage (Vth) is -1.7V, and its on-resistance (RDS(ON)) is 77mΩ at VGS=4.5V and 64mΩ at VGS=10V. The maximum drain current (ID) is -30A. IRF9Z24SPBF-VB uses Trench technology to provide low conduction loss and good switching performance, making it suitable for circuits requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | 64mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
IRF9Z24SPBF-VB parameter description
- **Package type**: TO263
- **Channel configuration**: Single P channel
- **Drain-source breakdown voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 77mΩ @ VGS=4.5V
- 64mΩ @ VGS=10V
- **Drain current (ID)**: -30A
- **Technology**: Trench
- **Power dissipation**: 75W (max)
- **Thermal resistance from junction to ambient (RθJA)**: 62°C/W
- **Thermal resistance from junction to case (RθJC)**: 2.5°C/W
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: Turn on time is about 50ns, turn off time is about 120ns
- **Package type**: TO263
- **Channel configuration**: Single P channel
- **Drain-source breakdown voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 77mΩ @ VGS=4.5V
- 64mΩ @ VGS=10V
- **Drain current (ID)**: -30A
- **Technology**: Trench
- **Power dissipation**: 75W (max)
- **Thermal resistance from junction to ambient (RθJA)**: 62°C/W
- **Thermal resistance from junction to case (RθJC)**: 2.5°C/W
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: Turn on time is about 50ns, turn off time is about 120ns
Domain and module applications：
Applications and module examples
1. **High current power switch**
IRF9Z24SPBF-VB is suitable for high current power switch, such as in DC/DC converters. Its high current handling capability and low on-resistance enable it to operate stably under high load conditions, improving power conversion efficiency.
2. **Electric vehicle**
In the battery management system of electric vehicles, this MOSFET can be used for switching and protecting high current loads. Its strong current handling capability and low conduction loss ensure the reliability and efficiency of the battery system.
3. **Solar inverter**
IRF9Z24SPBF-VB is suitable for high current load switching and power conditioning modules in solar inverters. Its high current capability and excellent switching performance make it an ideal choice for high power photovoltaic systems.
4. **Industrial Motor Control**
In industrial motor control applications, this MOSFET can effectively drive high current motor loads and is suitable for industrial systems that require high voltage and high current control to ensure efficient operation of the motor.
5. **Power Protection**
IRF9Z24SPBF-VB can also be used for load switching and overcurrent protection in power protection circuits. Its high current handling capability and low conduction loss can effectively protect circuit components and improve system stability and safety.
1. **High current power switch**
IRF9Z24SPBF-VB is suitable for high current power switch, such as in DC/DC converters. Its high current handling capability and low on-resistance enable it to operate stably under high load conditions, improving power conversion efficiency.
2. **Electric vehicle**
In the battery management system of electric vehicles, this MOSFET can be used for switching and protecting high current loads. Its strong current handling capability and low conduction loss ensure the reliability and efficiency of the battery system.
3. **Solar inverter**
IRF9Z24SPBF-VB is suitable for high current load switching and power conditioning modules in solar inverters. Its high current capability and excellent switching performance make it an ideal choice for high power photovoltaic systems.
4. **Industrial Motor Control**
In industrial motor control applications, this MOSFET can effectively drive high current motor loads and is suitable for industrial systems that require high voltage and high current control to ensure efficient operation of the motor.
5. **Power Protection**
IRF9Z24SPBF-VB can also be used for load switching and overcurrent protection in power protection circuits. Its high current handling capability and low conduction loss can effectively protect circuit components and improve system stability and safety.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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