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IRF9Z24NSTRR-VB Product details
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Product Introduction
**IRF9Z24NSTRR-VB** is a P-channel MOSFET in TO263 package. It is designed for high current and high voltage applications and can withstand drain-source voltages up to -60V. This MOSFET uses Trench technology, has excellent switching characteristics and low on-resistance, and is suitable for applications requiring high performance such as power switching and power management. Its high current carrying capacity and low on-resistance ensure high performance and stability in high power environments.
**IRF9Z24NSTRR-VB** is a P-channel MOSFET in TO263 package. It is designed for high current and high voltage applications and can withstand drain-source voltages up to -60V. This MOSFET uses Trench technology, has excellent switching characteristics and low on-resistance, and is suitable for applications requiring high performance such as power switching and power management. Its high current carrying capacity and low on-resistance ensure high performance and stability in high power environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -35A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Model**: IRF9Z24NSTRR-VB
- **Package**: TO263
- **Configuration**: Single-P-Channel
- **Drain-Source Voltage (VDS)**: -60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 60mΩ @ VGS = 4.5V
- 48mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -35A
- **Technology**: Trench
- **Model**: IRF9Z24NSTRR-VB
- **Package**: TO263
- **Configuration**: Single-P-Channel
- **Drain-Source Voltage (VDS)**: -60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 60mΩ @ VGS = 4.5V
- 48mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -35A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**: IRF9Z24NSTRR-VB is suitable for switch and control circuits in power management modules. Its low on-resistance and high current handling capability make it an ideal choice for power distribution and regulation, which can effectively improve the efficiency and stability of the power system.
2. **DC-DC converter**: In DC-DC converters, this MOSFET can be used in the switch control part. Its high current carrying capacity and low on-resistance help reduce power loss and improve conversion efficiency, and is suitable for power supply designs that require high-performance switches.
3. **Load switch**: In load switch applications, IRF9Z24NSTRR-VB can be used as a load control switch. Its high current carrying capacity and low on-resistance ensure the reliability and efficiency of the switch operation, and is suitable for various home appliances and industrial control equipment.
4. **Power Amplifier**: In power amplifier designs, the IRF9Z24NSTRR-VB can be used as a load switch to manage power delivery. Its low on-resistance and high current capability ensure high efficiency and stability of the power amplifier, making it suitable for applications that require high power handling.
5. **Electric Vehicle**: In electric vehicles, this MOSFET can be used in battery management and motor drive systems. Its high current handling capability and high voltage resistance ensure the reliability and efficiency of electric vehicles under extreme operating conditions.
These areas and modules demonstrate the wide applicability of the IRF9Z24NSTRR-VB in high current and high voltage environments, especially in power switching applications that require high efficiency and stability.
1. **Power management**: IRF9Z24NSTRR-VB is suitable for switch and control circuits in power management modules. Its low on-resistance and high current handling capability make it an ideal choice for power distribution and regulation, which can effectively improve the efficiency and stability of the power system.
2. **DC-DC converter**: In DC-DC converters, this MOSFET can be used in the switch control part. Its high current carrying capacity and low on-resistance help reduce power loss and improve conversion efficiency, and is suitable for power supply designs that require high-performance switches.
3. **Load switch**: In load switch applications, IRF9Z24NSTRR-VB can be used as a load control switch. Its high current carrying capacity and low on-resistance ensure the reliability and efficiency of the switch operation, and is suitable for various home appliances and industrial control equipment.
4. **Power Amplifier**: In power amplifier designs, the IRF9Z24NSTRR-VB can be used as a load switch to manage power delivery. Its low on-resistance and high current capability ensure high efficiency and stability of the power amplifier, making it suitable for applications that require high power handling.
5. **Electric Vehicle**: In electric vehicles, this MOSFET can be used in battery management and motor drive systems. Its high current handling capability and high voltage resistance ensure the reliability and efficiency of electric vehicles under extreme operating conditions.
These areas and modules demonstrate the wide applicability of the IRF9Z24NSTRR-VB in high current and high voltage environments, especially in power switching applications that require high efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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