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IRF9Z24LPBF-VB Product details
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Product Introduction
**IRF9Z24LPBF-VB** is a high-performance P-type MOSFET in TO262 package. It uses Trench technology and has excellent conduction performance and high current handling capability. It is mainly used in power management and switch control circuits, especially for occasions requiring efficient current control and low on-resistance. The design of IRF9Z24LPBF-VB enables it to work stably at a drain-source voltage of -60V and provide a drain current of -53A, suitable for various high-current applications.
**IRF9Z24LPBF-VB** is a high-performance P-type MOSFET in TO262 package. It uses Trench technology and has excellent conduction performance and high current handling capability. It is mainly used in power management and switch control circuits, especially for occasions requiring efficient current control and low on-resistance. The design of IRF9Z24LPBF-VB enables it to work stably at a drain-source voltage of -60V and provide a drain current of -53A, suitable for various high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-P | -60V | -2V | -53A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-P | -60V | -2V | -53A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-P | -60V | -2V | -53A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-P |
Detailed parameter description
- **Model**: IRF9Z24LPBF-VB
- **Package**: TO262
- **Configuration**: Single P-type channel
- **Drain-source voltage (V_DS)**: -60V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -2V
- **On-resistance (R_DS(ON))**:
- @ V_GS = 10V: 16mΩ
- **Maximum leakage current (I_D)**: -53A
- **Technology**: Trench
- **Model**: IRF9Z24LPBF-VB
- **Package**: TO262
- **Configuration**: Single P-type channel
- **Drain-source voltage (V_DS)**: -60V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -2V
- **On-resistance (R_DS(ON))**:
- @ V_GS = 10V: 16mΩ
- **Maximum leakage current (I_D)**: -53A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**:
IRF9Z24LPBF-VB is ideal for efficient power management systems such as DC-DC converters and power modules. Its low on-resistance helps reduce power loss and improve power conversion efficiency, especially in situations where large currents need to be handled.
2. **Switching circuit**:
In switching circuit applications, this MOSFET can be used as a load switch and reverse protection switch. Its high current handling capability and stable operating performance enable it to reliably control the switching state of the load and protect the circuit from overcurrent and short circuit.
3. **Motor drive**:
IRF9Z24LPBF-VB can be used in motor drive systems, especially in environments that require high current and high voltage. Its strong current carrying capacity ensures smooth start-up and operation of the motor, and is suitable for motor controller and driver design.
4. **Power Amplifier**:
In power amplifier applications, the low on-resistance and high current handling capability of this MOSFET enables it to effectively amplify signals and drive high-power loads. Its reliable performance and stable current output can support the requirements of high-power amplifiers.
5. **High-Power Switch**:
This MOSFET is also suitable for high-power switching applications such as power switches and load switching circuits. Its high withstand voltage and low on-resistance enable it to operate stably under high-power conditions, meeting the needs of various industrial and consumer electronics applications.
1. **Power management**:
IRF9Z24LPBF-VB is ideal for efficient power management systems such as DC-DC converters and power modules. Its low on-resistance helps reduce power loss and improve power conversion efficiency, especially in situations where large currents need to be handled.
2. **Switching circuit**:
In switching circuit applications, this MOSFET can be used as a load switch and reverse protection switch. Its high current handling capability and stable operating performance enable it to reliably control the switching state of the load and protect the circuit from overcurrent and short circuit.
3. **Motor drive**:
IRF9Z24LPBF-VB can be used in motor drive systems, especially in environments that require high current and high voltage. Its strong current carrying capacity ensures smooth start-up and operation of the motor, and is suitable for motor controller and driver design.
4. **Power Amplifier**:
In power amplifier applications, the low on-resistance and high current handling capability of this MOSFET enables it to effectively amplify signals and drive high-power loads. Its reliable performance and stable current output can support the requirements of high-power amplifiers.
5. **High-Power Switch**:
This MOSFET is also suitable for high-power switching applications such as power switches and load switching circuits. Its high withstand voltage and low on-resistance enable it to operate stably under high-power conditions, meeting the needs of various industrial and consumer electronics applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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