Product introduction：
IRF9Z20PBF-VB MOSFET Product Introduction
IRF9Z20PBF-VB is a high-performance single P-channel power MOSFET in TO220 package, designed for switching applications requiring high current and high voltage. The drain-source voltage (VDS) of this MOSFET is -60V, which is suitable for stable operation in a negative voltage environment. Its gate-source voltage (VGS) range is ±20V, and the turn-on threshold voltage (Vth) is -1.7V, ensuring effective turn-on at a lower gate voltage. The on-resistance (RDS(ON)) of IRF9Z20PBF-VB is 62mΩ at VGS of 10V and 74mΩ at 4.5V, and it can handle a drain current of up to -40A. The use of Trench technology makes it have excellent electrical performance and low power consumption characteristics, suitable for a variety of high-efficiency switching applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-P |
-60V |
|
-1.7V |
-40A |
|
|
62mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-P |
-60V |
|
-1.7V |
-40A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-P |
-60V |
|
-1.7V |
-40A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-P |
|
|
|
|
|
|
|
IRF9Z20PBF-VB Detailed parameter description
- **Package type**: TO220
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 74mΩ @ VGS = 4.5V
- 62mΩ @ VGS = 10V
- **Drain current (ID)**: -40A
- **Technology type**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power switch**: The IRF9Z20PBF-VB is ideal for power switching circuits due to its high current and high voltage handling capabilities. Its low on-resistance and high current capability enable it to switch efficiently in power management modules, thereby improving power conversion efficiency and system stability.
2. **Motor drive**: In motor drive applications, the IRF9Z20PBF-VB can be used as a high-side switch to control the start, stop and reverse operation of the motor. Its high current handling capability and low on-resistance ensure high efficiency and reliability of the motor drive system, suitable for various power tools and industrial motor control.
3. **High voltage switch**: The high drain-source voltage of this MOSFET makes it suitable for high voltage switching applications, such as control and protection circuits of high voltage power supplies. The high current capability and good switching characteristics of the IRF9Z20PBF-VB enable it to operate stably in environments requiring high voltage and high current.
4. **Inverters and converters**: In inverters and power converters, the IRF9Z20PBF-VB can be used as a load switch and high-side switch to help improve the system's conversion efficiency. Its Trench technology process enables it to excel in high-power applications, especially in inverter systems that require high current and high voltage handling.
The high current handling capability and low on-resistance of the IRF9Z20PBF-VB enable it to excel in a variety of high current and high voltage applications, providing efficient and reliable solutions for these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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