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IRF9Z14STRR-VB Product details
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Product Introduction - IRF9Z14STRR-VB
The IRF9Z14STRR-VB is a single P-channel enhancement-mode power MOSFET in a TO-263 package, designed for medium and high voltage applications. The device supports a drain-source voltage (VDS) of up to -60V, making it suitable for switching and power management scenarios that require high voltage processing. The threshold voltage (Vth) of the IRF9Z14STRR-VB is -1.7V, and it uses advanced Trench technology with a low on-resistance, making it excellent in high current applications. Its on-resistance (RDS(ON)) is 77mΩ at VGS=4.5V and 64mΩ at VGS=10V, and the maximum drain current (ID) reaches -30A. These features make the IRF9Z14STRR-VB an ideal choice for high-efficiency switching and control applications.
The IRF9Z14STRR-VB is a single P-channel enhancement-mode power MOSFET in a TO-263 package, designed for medium and high voltage applications. The device supports a drain-source voltage (VDS) of up to -60V, making it suitable for switching and power management scenarios that require high voltage processing. The threshold voltage (Vth) of the IRF9Z14STRR-VB is -1.7V, and it uses advanced Trench technology with a low on-resistance, making it excellent in high current applications. Its on-resistance (RDS(ON)) is 77mΩ at VGS=4.5V and 64mΩ at VGS=10V, and the maximum drain current (ID) reaches -30A. These features make the IRF9Z14STRR-VB an ideal choice for high-efficiency switching and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | 64mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Parameter description
- **Model**: IRF9Z14STRR-VB
- **Package**: TO263
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 77mΩ @ VGS=4.5V
- 64mΩ @ VGS=10V
- **Maximum drain current (ID)**: -30A
- **Technology**: Trench
- **Model**: IRF9Z14STRR-VB
- **Package**: TO263
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 77mΩ @ VGS=4.5V
- 64mΩ @ VGS=10V
- **Maximum drain current (ID)**: -30A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management**: The high current and low on-resistance characteristics of the IRF9Z14STRR-VB make it suitable for switching elements in power management systems. For example, in a DC-DC converter, it can effectively control the current flow direction and improve the conversion efficiency and stability of the system.
2. **Battery protection**: Due to its high withstand voltage and low on-resistance, the IRF9Z14STRR-VB is an ideal choice in battery protection circuits. It can provide efficient switching control during battery charging and discharging, prevent overvoltage and overcurrent conditions, and improve the safety and reliability of the battery system.
3. **Load switch**: In applications that require high current load switching, this MOSFET can be used as a load switch. Its high current carrying capacity and low on-resistance ensure stable operation under large load conditions, suitable for load control in industrial control and consumer electronic devices.
4. **Motor drive**: The IRF9Z14STRR-VB is also suitable for use in motor drive circuits, especially in applications requiring high current switching. It can maintain high efficiency under high current conditions and provide stable motor control and drive capabilities.
The high voltage tolerance and excellent switching performance of the IRF9Z14STRR-VB make it a key component for high-efficiency switching and control applications in modern electronic systems.
1. **Power management**: The high current and low on-resistance characteristics of the IRF9Z14STRR-VB make it suitable for switching elements in power management systems. For example, in a DC-DC converter, it can effectively control the current flow direction and improve the conversion efficiency and stability of the system.
2. **Battery protection**: Due to its high withstand voltage and low on-resistance, the IRF9Z14STRR-VB is an ideal choice in battery protection circuits. It can provide efficient switching control during battery charging and discharging, prevent overvoltage and overcurrent conditions, and improve the safety and reliability of the battery system.
3. **Load switch**: In applications that require high current load switching, this MOSFET can be used as a load switch. Its high current carrying capacity and low on-resistance ensure stable operation under large load conditions, suitable for load control in industrial control and consumer electronic devices.
4. **Motor drive**: The IRF9Z14STRR-VB is also suitable for use in motor drive circuits, especially in applications requiring high current switching. It can maintain high efficiency under high current conditions and provide stable motor control and drive capabilities.
The high voltage tolerance and excellent switching performance of the IRF9Z14STRR-VB make it a key component for high-efficiency switching and control applications in modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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