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IRF9Z14STRLPBF-VB Product details

Product introduction:

IRF9Z14STRLPBF-VB MOSFET Product Introduction

The IRF9Z14STRLPBF-VB is a high-performance P-channel power MOSFET in a TO-263 package designed for medium voltage applications. It uses Trench technology, which provides low on-resistance and excellent switching performance, making it perform well in high current and high voltage environments. The high current handling capability and low on-resistance of the IRF9Z14STRLPBF-VB make it very effective in applications that require negative voltages.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-P -60V -1.7V -30A 64mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-P -60V -1.7V -30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-P -60V -1.7V -30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-P
Detailed parameter description of IRF9Z14STRLPBF-VB

- **Package type**: TO-263
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Gate voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 77mΩ @ VGS = 4.5V
- 64mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -30A
- **Technology type**: Trench technology
- **Power dissipation (Ptot)**: 62W (depending on heat dissipation conditions)
- **Gate charge (Qg)**: 65nC
- **Switching speed**: Moderate

Domain and module applications:

Applications and modules

1. **Power switch**: The IRF9Z14STRLPBF-VB is suitable for power switch applications such as DC-DC converters and switch mode power supplies (SMPS). Its high current carrying capability and low on-resistance enable it to effectively perform efficient energy conversion in power switches and reduce power consumption.

2. **Inverter and motor control**: In inverter and motor drive applications, this MOSFET is capable of handling high current loads and is suitable for motor control and reverse current protection. Its stable on-state performance and high current handling capability ensure reliable operation of the system.

3. **Power protection circuit**: The high current and high voltage handling capabilities of the IRF9Z14STRLPBF-VB make it suitable for power protection circuits such as overcurrent protection and reverse current protection. It can effectively protect the power system from damage caused by overcurrent and wrong polarity connection.

4. **High current load drive**: This MOSFET is also widely used in high current load drive applications, such as high power LED drive and high power current control circuit. Its low on-resistance helps to reduce energy loss and improve system efficiency.

With its high current handling capability, low on-resistance and excellent switching performance, IRF9Z14STRLPBF-VB provides a reliable solution for a variety of high current and medium voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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