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IRF9Z14LPBF-VB Product details

Product introduction:

IRF9Z14LPBF-VB Product Introduction
IRF9Z14LPBF-VB is a high-performance P-channel MOSFET in TO262 package, designed for medium to high power and high current applications. The drain-source voltage (VDS) of this MOSFET can withstand up to -60V, and the gate-source voltage (VGS) range is ±20V. Its gate threshold voltage is -2V, and the on-resistance is 16mΩ when the gate voltage is 10V, which can effectively reduce power consumption and improve switching efficiency. The maximum drain current of IRF9Z14LPBF-VB is -53A, which is suitable for applications under high load conditions. It uses Trench technology to reduce on-resistance and improve overall performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO262 Single-P -60V -2V -53A 16mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO262 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO262 Single-P -60V -2V -53A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO262 Single-P -60V -2V -53A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO262 Single-P
IRF9Z14LPBF-VB Detailed parameter description
- **Package type**: TO262
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**: 16mΩ @ VGS=10V
- **Drain current (ID)**: -53A
- **Operating temperature range**: -55°C to 150°C
- **Technology**: Trench technology
- **Power dissipation**: 94W (max)

Domain and module applications:

IRF9Z14LPBF-VB Applicable Fields and Application Modules

1. **Power Management**: IRF9Z14LPBF-VB is an excellent choice in power management systems for power switches that require high current and medium voltage. Its low on-resistance makes it excellent in power distribution and load switching, helping to reduce power consumption and improve efficiency.

2. **Battery Protection System**: In battery management and protection circuits, especially for protecting batteries from overcurrent and overvoltage, IRF9Z14LPBF-VB can provide reliable switching functions to ensure battery safety and stability.

3. **Power Amplifier**: This MOSFET performs well in power amplifier applications and is suitable for power amplifier circuits with high current and medium voltage, providing stable switching performance and efficient power control.

4. **Motor Drive**: In motor drive systems, IRF9Z14LPBF-VB can handle motor control applications with high current requirements. Its low on-resistance and high drain current capability make it an ideal choice in motor control circuits, ensuring stable motor operation and efficient control.

5. **High-power switching applications**: The IRF9Z14LPBF-VB is also suitable for a variety of high-power switching applications, such as power converters and high-power power protection circuits. Its high current handling capability and low on-resistance can improve the overall performance and reliability of the system.

The high current handling capability and low on-resistance of the IRF9Z14LPBF-VB make it an efficient and reliable solution in areas such as power management, battery protection, motor control, and power amplification.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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