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IRF9640S-VB Product details
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IRF9640S-VB Product Introduction
IRF9640S-VB is a high voltage P-channel MOSFET in TO263 package, designed for high voltage and high power applications. The drain-source voltage (VDS) of this MOSFET can withstand up to -200V, the gate-source voltage (VGS) range is ±20V, and the gate threshold voltage is -3.5V. Its on-resistance is 600mΩ at a gate voltage of 4.5V and 500mΩ at 10V. The maximum drain current is -11A, which is suitable for high voltage and high current circuits. IRF9640S-VB uses Trench technology to reduce on-resistance and improve switching efficiency, thereby improving overall performance.
IRF9640S-VB is a high voltage P-channel MOSFET in TO263 package, designed for high voltage and high power applications. The drain-source voltage (VDS) of this MOSFET can withstand up to -200V, the gate-source voltage (VGS) range is ±20V, and the gate threshold voltage is -3.5V. Its on-resistance is 600mΩ at a gate voltage of 4.5V and 500mΩ at 10V. The maximum drain current is -11A, which is suitable for high voltage and high current circuits. IRF9640S-VB uses Trench technology to reduce on-resistance and improve switching efficiency, thereby improving overall performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | 500mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
IRF9640S-VB Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -3.5V
- **On-resistance (RDS(ON))**: 600mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Drain current (ID)**: -11A
- **Operating temperature range**: -55°C to 150°C
- **Technology**: Trench technology
- **Power dissipation**: 40W (max)
- **Package type**: TO263
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -3.5V
- **On-resistance (RDS(ON))**: 600mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Drain current (ID)**: -11A
- **Operating temperature range**: -55°C to 150°C
- **Technology**: Trench technology
- **Power dissipation**: 40W (max)
Domain and module applications：
IRF9640S-VB Applicable Fields and Application Modules
1. **High Voltage Power Switch**: IRF9640S-VB is ideal for high voltage power switches, especially in power systems that need to handle up to -200V. It can efficiently switch power and loads while maintaining low power consumption, suitable for power distribution and power protection circuits.
2. **Inverter**: In high voltage inverter applications, such as solar inverters or industrial inverters, IRF9640S-VB can effectively control the flow of power, achieve efficient power conversion and power stability, and ensure efficient operation of the system.
3. **Battery Protection System**: In battery management and protection systems, especially high voltage battery packs, IRF9640S-VB can provide effective over-current and over-voltage protection to ensure the safety and stability of the battery pack.
4. **Power amplifier**: This MOSFET performs well in power amplifier circuits and can handle high voltage and high power requirements. It is used for switch and load control in high voltage power amplifiers and audio amplifiers.
5. **Motor drive applications**: The IRF9640S-VB is suitable for high voltage motor control systems. It can handle high current and high voltage motor drives to achieve stable control and protection of motors.
The high voltage handling capability and low on-resistance of the IRF9640S-VB make it a preferred component in high power and high voltage applications. It is widely used in power management, motor control, power amplification and other fields.
1. **High Voltage Power Switch**: IRF9640S-VB is ideal for high voltage power switches, especially in power systems that need to handle up to -200V. It can efficiently switch power and loads while maintaining low power consumption, suitable for power distribution and power protection circuits.
2. **Inverter**: In high voltage inverter applications, such as solar inverters or industrial inverters, IRF9640S-VB can effectively control the flow of power, achieve efficient power conversion and power stability, and ensure efficient operation of the system.
3. **Battery Protection System**: In battery management and protection systems, especially high voltage battery packs, IRF9640S-VB can provide effective over-current and over-voltage protection to ensure the safety and stability of the battery pack.
4. **Power amplifier**: This MOSFET performs well in power amplifier circuits and can handle high voltage and high power requirements. It is used for switch and load control in high voltage power amplifiers and audio amplifiers.
5. **Motor drive applications**: The IRF9640S-VB is suitable for high voltage motor control systems. It can handle high current and high voltage motor drives to achieve stable control and protection of motors.
The high voltage handling capability and low on-resistance of the IRF9640S-VB make it a preferred component in high power and high voltage applications. It is widely used in power management, motor control, power amplification and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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