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IRF9640NS-VB Product details
Back to previous pageProduct introduction：
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The IRF9640NS-VB is a high voltage P-channel MOSFET in a TO263 package. It can withstand drain-source voltage (VDS) up to -200V and gate drive voltage (VGS) of ±20V, suitable for use in extreme voltage conditions. The gate threshold voltage (Vth) of this MOSFET is -3.5V, enabling it to start up at a lower gate voltage. The on-resistance (RDS(ON)) of the IRF9640NS-VB is 600mΩ @ VGS = 4.5V and 500mΩ @ VGS = 10V, ensuring good switching performance and moderate power consumption. Using Trench technology, this MOSFET has high reliability and stability in high voltage applications.
**
The IRF9640NS-VB is a high voltage P-channel MOSFET in a TO263 package. It can withstand drain-source voltage (VDS) up to -200V and gate drive voltage (VGS) of ±20V, suitable for use in extreme voltage conditions. The gate threshold voltage (Vth) of this MOSFET is -3.5V, enabling it to start up at a lower gate voltage. The on-resistance (RDS(ON)) of the IRF9640NS-VB is 600mΩ @ VGS = 4.5V and 500mΩ @ VGS = 10V, ensuring good switching performance and moderate power consumption. Using Trench technology, this MOSFET has high reliability and stability in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | 500mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
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- **Package**: TO263
- **Configuration**: Single P-channel
- **Drain-Source Voltage (VDS)**: -200V
- **Gate Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: -3.5V
- **On-Resistance (RDS(ON))**:
- 600mΩ @ VGS = 4.5V
- 500mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -11A
- **Technology**: Trench
- **Operating Temperature Range**: -55°C to 150°C
- **Package Features**: The TO263 package provides good thermal performance and is suitable for handling high power applications.
**
- **Package**: TO263
- **Configuration**: Single P-channel
- **Drain-Source Voltage (VDS)**: -200V
- **Gate Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: -3.5V
- **On-Resistance (RDS(ON))**:
- 600mΩ @ VGS = 4.5V
- 500mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -11A
- **Technology**: Trench
- **Operating Temperature Range**: -55°C to 150°C
- **Package Features**: The TO263 package provides good thermal performance and is suitable for handling high power applications.
**
Domain and module applications：
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1. **High Voltage Power Switch**
The IRF9640NS-VB is suitable for power switch applications that need to handle voltages up to -200V. This makes it an ideal choice in high voltage power converters and power adapters, capable of handling high voltage and high power loads while ensuring efficient power conversion.
2. **Battery Management System**
In high voltage battery management systems, the IRF9640NS-VB is able to provide reliable switching and protection functions. Due to its high voltage withstand capability, it can be used to protect the battery system from overvoltage and overcurrent conditions, while improving the safety and efficiency of the battery system.
3. **Power Amplifier Power**
In power amplifier power management, this MOSFET can be used in high voltage applications such as audio amplifiers or RF amplifiers. Its high voltage withstand capability and low on-resistance help provide a stable power supply, ensuring high efficiency and reliability of the amplifier.
4. **Industrial Load Switch**
Because it can withstand drain-source voltages up to -200V, the IRF9640NS-VB is suitable for high-voltage load switches in industrial equipment. For example, in motor drive systems or high-power load control modules, this MOSFET can operate stably to ensure system efficiency and reliability.
1. **High Voltage Power Switch**
The IRF9640NS-VB is suitable for power switch applications that need to handle voltages up to -200V. This makes it an ideal choice in high voltage power converters and power adapters, capable of handling high voltage and high power loads while ensuring efficient power conversion.
2. **Battery Management System**
In high voltage battery management systems, the IRF9640NS-VB is able to provide reliable switching and protection functions. Due to its high voltage withstand capability, it can be used to protect the battery system from overvoltage and overcurrent conditions, while improving the safety and efficiency of the battery system.
3. **Power Amplifier Power**
In power amplifier power management, this MOSFET can be used in high voltage applications such as audio amplifiers or RF amplifiers. Its high voltage withstand capability and low on-resistance help provide a stable power supply, ensuring high efficiency and reliability of the amplifier.
4. **Industrial Load Switch**
Because it can withstand drain-source voltages up to -200V, the IRF9640NS-VB is suitable for high-voltage load switches in industrial equipment. For example, in motor drive systems or high-power load control modules, this MOSFET can operate stably to ensure system efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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