中文
English
IRF9630STRR-VB Product details
Back to previous pageProduct introduction：
Product Introduction - IRF9630STRR-VB
The IRF9630STRR-VB is a single P-channel enhancement-mode power MOSFET in a TO-263 package, designed for high voltage and medium current applications. The device supports a drain-source voltage (VDS) of up to -200V, suitable for switching and power management applications requiring high voltage. The IRF9630STRR-VB has a high threshold voltage (Vth) of -3.5V and uses Trench technology to provide good switching performance. Its on-resistance (RDS(ON)) is 600mΩ at VGS=4.5V and 500mΩ at VGS=10V, and the maximum drain current (ID) is -11A, allowing it to maintain high efficiency under high voltage conditions.
The IRF9630STRR-VB is a single P-channel enhancement-mode power MOSFET in a TO-263 package, designed for high voltage and medium current applications. The device supports a drain-source voltage (VDS) of up to -200V, suitable for switching and power management applications requiring high voltage. The IRF9630STRR-VB has a high threshold voltage (Vth) of -3.5V and uses Trench technology to provide good switching performance. Its on-resistance (RDS(ON)) is 600mΩ at VGS=4.5V and 500mΩ at VGS=10V, and the maximum drain current (ID) is -11A, allowing it to maintain high efficiency under high voltage conditions.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | 500mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Parameter description
- **Model**: IRF9630STRR-VB
- **Package**: TO263
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3.5V
- **On-resistance (RDS(ON))**:
- 600mΩ @ VGS=4.5V
- 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: -11A
- **Technology**: Trench
- **Model**: IRF9630STRR-VB
- **Package**: TO263
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3.5V
- **On-resistance (RDS(ON))**:
- 600mΩ @ VGS=4.5V
- 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: -11A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **High voltage power switch**: The high voltage withstand capability (-200V) of IRF9630STRR-VB makes it very suitable for high voltage power switch applications. In high voltage power management systems, this MOSFET can be used as a high voltage switch to control the on and off of the power supply, improving the stability and safety of the system.
2. **Power converter**: In power converters, the high voltage handling capability and medium current capability of IRF9630STRR-VB enable it to handle high voltage input and output currents. It can be applied to DC-DC converters and other power conversion devices to improve conversion efficiency and system performance.
3. **Battery protection circuit**: Due to its high voltage and high current capabilities, IRF9630STRR-VB can be used in battery protection circuits to provide protection for high voltage battery systems. It can help manage the battery charging and discharging process, prevent overvoltage or overcurrent conditions, and ensure system safety.
4. **Industrial Control Systems**: In industrial control systems, this MOSFET can be used as a load switch or control switch for load control in high voltage applications. Its high voltage and medium current handling capabilities ensure reliable operation in harsh environments.
The IRF9630STRR-VB combines high voltage withstand capability with moderate on-resistance, making it an excellent choice for high voltage and high current applications, making it an ideal choice for high-performance switching and protection applications in modern electronic designs.
1. **High voltage power switch**: The high voltage withstand capability (-200V) of IRF9630STRR-VB makes it very suitable for high voltage power switch applications. In high voltage power management systems, this MOSFET can be used as a high voltage switch to control the on and off of the power supply, improving the stability and safety of the system.
2. **Power converter**: In power converters, the high voltage handling capability and medium current capability of IRF9630STRR-VB enable it to handle high voltage input and output currents. It can be applied to DC-DC converters and other power conversion devices to improve conversion efficiency and system performance.
3. **Battery protection circuit**: Due to its high voltage and high current capabilities, IRF9630STRR-VB can be used in battery protection circuits to provide protection for high voltage battery systems. It can help manage the battery charging and discharging process, prevent overvoltage or overcurrent conditions, and ensure system safety.
4. **Industrial Control Systems**: In industrial control systems, this MOSFET can be used as a load switch or control switch for load control in high voltage applications. Its high voltage and medium current handling capabilities ensure reliable operation in harsh environments.
The IRF9630STRR-VB combines high voltage withstand capability with moderate on-resistance, making it an excellent choice for high voltage and high current applications, making it an ideal choice for high-performance switching and protection applications in modern electronic designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
