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IRF9630STRLPBF-VB Product details
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IRF9630STRLPBF-VB MOSFET Product Introduction
The IRF9630STRLPBF-VB is a high voltage P-channel power MOSFET in TO-263 package, designed for medium and high voltage applications. Using Trench technology, this MOSFET provides excellent switching performance and stable current handling capabilities. Its design features enable it to operate reliably in high voltage environments, and is particularly suitable for use in circuits that require high voltage switching. It can effectively manage negative voltages and ensure system safety and efficiency.
The IRF9630STRLPBF-VB is a high voltage P-channel power MOSFET in TO-263 package, designed for medium and high voltage applications. Using Trench technology, this MOSFET provides excellent switching performance and stable current handling capabilities. Its design features enable it to operate reliably in high voltage environments, and is particularly suitable for use in circuits that require high voltage switching. It can effectively manage negative voltages and ensure system safety and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | 500mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description of IRF9630STRLPBF-VB
- **Package type**: TO-263
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -200V
- **Gate voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: -3.5V
- **On-resistance (RDS(ON))**:
- 600mΩ @ VGS = 4.5V
- 500mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -11A
- **Technology type**: Trench technology
- **Power dissipation (Ptot)**: 60W (depending on heat dissipation conditions)
- **Gate charge (Qg)**: 90nC
- **Switching speed**: Moderate
- **Package type**: TO-263
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -200V
- **Gate voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: -3.5V
- **On-resistance (RDS(ON))**:
- 600mΩ @ VGS = 4.5V
- 500mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -11A
- **Technology type**: Trench technology
- **Power dissipation (Ptot)**: 60W (depending on heat dissipation conditions)
- **Gate charge (Qg)**: 90nC
- **Switching speed**: Moderate
Domain and module applications：
Applications and Modules
1. **High Voltage Power Switch**: The IRF9630STRLPBF-VB is particularly suitable for high voltage power switch applications, such as high voltage switch mode power supplies (SMPS) and switching functions in battery management systems. Its high voltage withstand capability and reliable switching performance ensure efficient energy transmission and system stability in high voltage environments.
2. **Inverter and Motor Control**: In inverter and motor drive applications, this MOSFET is able to provide high voltage switching capabilities, especially in reverse current protection and motor control circuits. Its high voltage handling capability and stable conduction performance ensure reliable operation in these applications.
3. **Power Protection Circuit**: The IRF9630STRLPBF-VB can be widely used in power protection circuits, including overvoltage protection and reverse current protection. The high voltage and high current handling capabilities of this MOSFET make it an effective component to protect power systems from damage.
4. **High current load drive**: Due to its high current handling capability, this MOSFET is also suitable for high power load drive applications, such as high power LED drive and current control circuits. It is able to maintain stable performance under high load conditions and reduce energy loss during switching.
IRF9630STRLPBF-VB provides a reliable solution for a variety of high voltage and high current applications through its high voltage tolerance, excellent current handling capability and efficient switching performance.
1. **High Voltage Power Switch**: The IRF9630STRLPBF-VB is particularly suitable for high voltage power switch applications, such as high voltage switch mode power supplies (SMPS) and switching functions in battery management systems. Its high voltage withstand capability and reliable switching performance ensure efficient energy transmission and system stability in high voltage environments.
2. **Inverter and Motor Control**: In inverter and motor drive applications, this MOSFET is able to provide high voltage switching capabilities, especially in reverse current protection and motor control circuits. Its high voltage handling capability and stable conduction performance ensure reliable operation in these applications.
3. **Power Protection Circuit**: The IRF9630STRLPBF-VB can be widely used in power protection circuits, including overvoltage protection and reverse current protection. The high voltage and high current handling capabilities of this MOSFET make it an effective component to protect power systems from damage.
4. **High current load drive**: Due to its high current handling capability, this MOSFET is also suitable for high power load drive applications, such as high power LED drive and current control circuits. It is able to maintain stable performance under high load conditions and reduce energy loss during switching.
IRF9630STRLPBF-VB provides a reliable solution for a variety of high voltage and high current applications through its high voltage tolerance, excellent current handling capability and efficient switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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