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IRF9630SPBF-VB Product details
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Product Introduction:
IRF9630SPBF-VB is a high voltage P-channel MOSFET in TO263 package. Designed for high voltage and high current applications, this MOSFET has excellent switching performance and low on-resistance. Its maximum drain-source voltage (VDS) is -200V, making it suitable for medium and high voltage circuits. The gate-source voltage (VGS) range of IRF9630SPBF-VB is ±20V, ensuring stable operation over a wide range of gate voltages. The threshold voltage (Vth) is -3.5V, ensuring that the MOSFET can switch effectively at low voltages. Its on-resistance (RDS(ON)) is 600mΩ (VGS=4.5V) and 500mΩ (VGS=10V), providing good current conduction performance. The maximum drain current (ID) is -11A, making it suitable for high current applications. This MOSFET uses Trench technology to optimize its conduction performance and switching efficiency.
IRF9630SPBF-VB is a high voltage P-channel MOSFET in TO263 package. Designed for high voltage and high current applications, this MOSFET has excellent switching performance and low on-resistance. Its maximum drain-source voltage (VDS) is -200V, making it suitable for medium and high voltage circuits. The gate-source voltage (VGS) range of IRF9630SPBF-VB is ±20V, ensuring stable operation over a wide range of gate voltages. The threshold voltage (Vth) is -3.5V, ensuring that the MOSFET can switch effectively at low voltages. Its on-resistance (RDS(ON)) is 600mΩ (VGS=4.5V) and 500mΩ (VGS=10V), providing good current conduction performance. The maximum drain current (ID) is -11A, making it suitable for high current applications. This MOSFET uses Trench technology to optimize its conduction performance and switching efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | 500mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3.5V
- **On-resistance (RDS(ON))**:
- 600mΩ @ VGS=4.5V
- 500mΩ @ VGS=10V
- **Drain current (ID)**: -11A
- **Technology**: Trench technology
- **Maximum power consumption**: 100W
- **Input capacitance (Ciss)**: Up to 5000pF
- **Output capacitance (Coss)**: Up to 2000pF
- **Reverse recovery time (trr)**: Suitable for high-speed switching applications
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3.5V
- **On-resistance (RDS(ON))**:
- 600mΩ @ VGS=4.5V
- 500mΩ @ VGS=10V
- **Drain current (ID)**: -11A
- **Technology**: Trench technology
- **Maximum power consumption**: 100W
- **Input capacitance (Ciss)**: Up to 5000pF
- **Output capacitance (Coss)**: Up to 2000pF
- **Reverse recovery time (trr)**: Suitable for high-speed switching applications
Domain and module applications：
Application fields and module examples:
Due to its high voltage and high current characteristics, the IRF9630SPBF-VB MOSFET is suitable for various power and control applications, especially in circuits that require high voltage and high current handling.
1. **High voltage power management**:
In high voltage power management systems, the IRF9630SPBF-VB can be used as a key component of power switching and regulation modules. Its 200V drain-source voltage capability enables it to provide stable performance in high voltage power conversion and regulation applications, especially in high voltage DC power systems.
2. **DC-DC converter**:
This MOSFET can be used in DC-DC converters, especially in high voltage and high current applications. Its low on-resistance and high current handling capability help improve conversion efficiency and reduce energy loss, and is suitable for high power power conversion modules.
3. **Load switch**:
The IRF9630SPBF-VB is suitable for various load switching applications, especially in situations where high voltage loads need to be controlled. Its high voltage handling capability makes it an excellent choice for electric vehicle charging systems, industrial equipment, and other high voltage load control.
4. **Motor Control**:
In motor control systems, the IRF9630SPBF-VB is able to handle high currents and is suitable for starting, stopping, and speed regulation of motors. Its high voltage and high current handling capabilities make it very effective in motor drive and control circuits.
5. **Switching Mode Power Supply (SMPS)**:
The high voltage and low on-resistance characteristics of this MOSFET make it an ideal choice in switch mode power supplies. It is able to effectively handle the switching needs in high voltage applications, such as high power server power supplies and power modules for communication equipment.
The high voltage and high current handling capabilities of the IRF9630SPBF-VB make it very useful in a variety of high power power and control applications, especially where high efficiency and stability are required.
Due to its high voltage and high current characteristics, the IRF9630SPBF-VB MOSFET is suitable for various power and control applications, especially in circuits that require high voltage and high current handling.
1. **High voltage power management**:
In high voltage power management systems, the IRF9630SPBF-VB can be used as a key component of power switching and regulation modules. Its 200V drain-source voltage capability enables it to provide stable performance in high voltage power conversion and regulation applications, especially in high voltage DC power systems.
2. **DC-DC converter**:
This MOSFET can be used in DC-DC converters, especially in high voltage and high current applications. Its low on-resistance and high current handling capability help improve conversion efficiency and reduce energy loss, and is suitable for high power power conversion modules.
3. **Load switch**:
The IRF9630SPBF-VB is suitable for various load switching applications, especially in situations where high voltage loads need to be controlled. Its high voltage handling capability makes it an excellent choice for electric vehicle charging systems, industrial equipment, and other high voltage load control.
4. **Motor Control**:
In motor control systems, the IRF9630SPBF-VB is able to handle high currents and is suitable for starting, stopping, and speed regulation of motors. Its high voltage and high current handling capabilities make it very effective in motor drive and control circuits.
5. **Switching Mode Power Supply (SMPS)**:
The high voltage and low on-resistance characteristics of this MOSFET make it an ideal choice in switch mode power supplies. It is able to effectively handle the switching needs in high voltage applications, such as high power server power supplies and power modules for communication equipment.
The high voltage and high current handling capabilities of the IRF9630SPBF-VB make it very useful in a variety of high power power and control applications, especially where high efficiency and stability are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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