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IRF9620STRR-VB Product details

Product introduction:

IRF9620STRR-VB Product Introduction
The IRF9620STRR-VB is a high voltage P-channel MOSFET in a TO263 package, designed for high voltage and high power applications. The drain-source voltage (VDS) of this MOSFET can withstand up to -200V, the gate-source voltage (VGS) is ±20V, and the gate threshold voltage is -3.5V. Its on-resistance is 600mΩ at a gate voltage of 4.5V and 500mΩ at 10V. The maximum drain current is -11A, which is suitable for handling high voltage and high current loads. The IRF9620STRR-VB uses Trench technology, which improves the switching efficiency of the device and reduces the on-resistance, thereby improving overall performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-P -200V -3.5V -11A 500mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-P -200V -3.5V -11A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-P -200V -3.5V -11A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-P
IRF9620STRR-VB Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -3.5V
- **On-resistance (RDS(ON))**: 600mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Drain current (ID)**: -11A
- **Operating temperature range**: -55°C to 150°C
- **Technology**: Trench technology
- **Power dissipation**: 40W (max)

Domain and module applications:

IRF9620STRR-VB Applicable Fields and Application Modules

1. **High Voltage Power Switch**: IRF9620STRR-VB is an ideal choice for high voltage power switches and is suitable for power systems that need to handle -200V. It can provide stable performance in power distribution and load switching while reducing power consumption and improving system efficiency.

2. **Inverter**: In high voltage inverter applications such as solar inverters and high voltage inverter power supplies, IRF9620STRR-VB can effectively manage power flow, achieve efficient power conversion and power protection, and ensure stable operation of the system.

3. **Battery Protection and Management**: In battery management systems, especially in high voltage battery packs, IRF9620STRR-VB can prevent overcurrent and overvoltage, provide effective protection and load switching, and ensure the safety and life of the battery.

4. **Power amplifier**: In high voltage power amplifier circuits, this MOSFET can be used as a switching element to achieve efficient power control and signal amplification. Its low on-resistance and high current handling capability make it suitable for high voltage and high power amplification applications.

5. **Motor drive system**: The IRF9620STRR-VB is suitable for high voltage motor control in motor drive systems. It can handle high voltage and high current to achieve reliable control and protection of the motor.

The high voltage handling capability and low on-resistance of the IRF9620STRR-VB make it excel in a variety of high power and high voltage applications, providing reliable solutions for power management, motor control and power amplification.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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