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IRF9540STRLPBF-VB Product details
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Product Introduction - IRF9540STRLPBF-VB
The IRF9540STRLPBF-VB is a single P-channel enhancement-mode power MOSFET in a TO-263 package, designed for high voltage and high current applications. The device supports a drain-source voltage (VDS) of up to -100V, making it suitable for high voltage switching and power management applications. The IRF9540STRLPBF-VB has a threshold voltage (Vth) of -2V and uses advanced Trench technology to provide low on-resistance (50mΩ @ VGS=4.5V and 40mΩ @ VGS=10V) for efficient switching operation. The maximum drain current (ID) of this MOSFET can reach -37A, making it suitable for use under high current conditions.
The IRF9540STRLPBF-VB is a single P-channel enhancement-mode power MOSFET in a TO-263 package, designed for high voltage and high current applications. The device supports a drain-source voltage (VDS) of up to -100V, making it suitable for high voltage switching and power management applications. The IRF9540STRLPBF-VB has a threshold voltage (Vth) of -2V and uses advanced Trench technology to provide low on-resistance (50mΩ @ VGS=4.5V and 40mΩ @ VGS=10V) for efficient switching operation. The maximum drain current (ID) of this MOSFET can reach -37A, making it suitable for use under high current conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Parameter description
- **Model**: IRF9540STRLPBF-VB
- **Package**: TO263
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- **Maximum drain current (ID)**: -37A
- **Technology**: Trench
- **Model**: IRF9540STRLPBF-VB
- **Package**: TO263
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- **Maximum drain current (ID)**: -37A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power Management and Switching**: The high withstand voltage and low on-resistance of the IRF9540STRLPBF-VB make it ideal for power management systems and high voltage switching applications. In efficient DC-DC converters and switching power supplies, this MOSFET can effectively reduce power losses and improve conversion efficiency.
2. **Load Switch**: Due to its superior current handling capability and low RDS(ON), this MOSFET performs well in load switching applications. It can be used as a switch for high current loads, ensuring efficient load control and system protection, especially in industrial and consumer electronic devices.
3. **Battery Management System**: In battery management systems, the IRF9540STRLPBF-VB can be used to control the charge and discharge paths and provide overcurrent and overvoltage protection. Its high current carrying capability and low on-resistance make it ideal for precise management of battery health and performance.
4. **Motor Drive and Control**: The high current handling capability of this MOSFET makes it suitable for motor drive applications. Especially in motor drive circuits that require high current switching, the IRF9540STRLPBF-VB is able to efficiently control the motor and provide stable performance.
These applications demonstrate the excellent performance of the IRF9540STRLPBF-VB in high voltage, high current environments, where its low on-resistance and high current handling capabilities make it an ideal choice for high-efficiency switching and control applications in modern electronic devices.
1. **Power Management and Switching**: The high withstand voltage and low on-resistance of the IRF9540STRLPBF-VB make it ideal for power management systems and high voltage switching applications. In efficient DC-DC converters and switching power supplies, this MOSFET can effectively reduce power losses and improve conversion efficiency.
2. **Load Switch**: Due to its superior current handling capability and low RDS(ON), this MOSFET performs well in load switching applications. It can be used as a switch for high current loads, ensuring efficient load control and system protection, especially in industrial and consumer electronic devices.
3. **Battery Management System**: In battery management systems, the IRF9540STRLPBF-VB can be used to control the charge and discharge paths and provide overcurrent and overvoltage protection. Its high current carrying capability and low on-resistance make it ideal for precise management of battery health and performance.
4. **Motor Drive and Control**: The high current handling capability of this MOSFET makes it suitable for motor drive applications. Especially in motor drive circuits that require high current switching, the IRF9540STRLPBF-VB is able to efficiently control the motor and provide stable performance.
These applications demonstrate the excellent performance of the IRF9540STRLPBF-VB in high voltage, high current environments, where its low on-resistance and high current handling capabilities make it an ideal choice for high-efficiency switching and control applications in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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