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IRF9540NSTRPBF-VB Product details
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IRF9540NSTRPBF-VB MOSFET Product Introduction:
IRF9540NSTRPBF-VB is a high-performance P-channel power MOSFET in TO263 package, designed for high voltage and high current switching applications. It has a drain-source voltage (VDS) of -100V and can handle higher load voltages. Its gate-source voltage (VGS) range is ±20V, ensuring stable operation under different gate voltage conditions. The threshold voltage (Vth) is -2V, providing a lower switching threshold. The on-resistance (RDS(ON)) of IRF9540NSTRPBF-VB is 50mΩ at VGS of 4.5V and 40mΩ at VGS of 10V, showing good conduction performance. Its maximum drain current (ID) is -37A, and it uses Trench technology, with excellent switching performance and low on-resistance, suitable for various power management and load control circuits.
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IRF9540NSTRPBF-VB is a high-performance P-channel power MOSFET in TO263 package, designed for high voltage and high current switching applications. It has a drain-source voltage (VDS) of -100V and can handle higher load voltages. Its gate-source voltage (VGS) range is ±20V, ensuring stable operation under different gate voltage conditions. The threshold voltage (Vth) is -2V, providing a lower switching threshold. The on-resistance (RDS(ON)) of IRF9540NSTRPBF-VB is 50mΩ at VGS of 4.5V and 40mΩ at VGS of 10V, showing good conduction performance. Its maximum drain current (ID) is -37A, and it uses Trench technology, with excellent switching performance and low on-resistance, suitable for various power management and load control circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description:
- **Package**: TO263, providing excellent thermal management performance and compact packaging suitable for high power applications.
- **Configuration**: Unipolar P-channel MOSFET, suitable for load switching and power management applications.
- **VDS (drain-source voltage)**: -100V, suitable for handling high voltage loads.
- **VGS (gate-source voltage)**: ±20V, ensuring stability under various gate voltage conditions.
- **Vth (threshold voltage)**: -2V, indicating the minimum gate voltage at which the MOSFET starts to turn on.
- **RDS(ON)**:
- 50mΩ @ VGS = 4.5V, providing a lower on-resistance to reduce energy loss.
- 40mΩ @ VGS = 10V, further reducing on-resistance and improving switching efficiency.
- **ID (leakage current)**: -37A, suitable for high current applications.
- **Technology**: Trench technology provides low on-resistance and efficient switching characteristics.
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- **Package**: TO263, providing excellent thermal management performance and compact packaging suitable for high power applications.
- **Configuration**: Unipolar P-channel MOSFET, suitable for load switching and power management applications.
- **VDS (drain-source voltage)**: -100V, suitable for handling high voltage loads.
- **VGS (gate-source voltage)**: ±20V, ensuring stability under various gate voltage conditions.
- **Vth (threshold voltage)**: -2V, indicating the minimum gate voltage at which the MOSFET starts to turn on.
- **RDS(ON)**:
- 50mΩ @ VGS = 4.5V, providing a lower on-resistance to reduce energy loss.
- 40mΩ @ VGS = 10V, further reducing on-resistance and improving switching efficiency.
- **ID (leakage current)**: -37A, suitable for high current applications.
- **Technology**: Trench technology provides low on-resistance and efficient switching characteristics.
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Domain and module applications：
Application fields and module examples:
1. **Power management**: The IRF9540NSTRPBF-VB performs well in power management circuits, especially in DC-DC converters and switching power supplies. Its high withstand voltage and low on-resistance enable it to work efficiently in high voltage environments, suitable for power modules, adapters and battery management systems.
2. **Motor drive**: In motor drive applications, the IRF9540NSTRPBF-VB can be used as a switching element in an H-bridge circuit. Its high leakage current capability and low on-resistance enable it to efficiently control the forward and reverse rotation and start and stop of the motor, and is widely used in motor drives, automation equipment and home appliance control.
3. **Load switch**: This MOSFET is suitable for load switching circuits, such as power line switches, lighting controls and other load switching applications. Its high current carrying capacity and low on-resistance give it excellent performance in load switches, suitable for use in a variety of industrial and consumer electronic devices.
4. **Battery protection circuit**: IRF9540NSTRPBF-VB is also suitable for battery protection circuits to control the charging and discharging process. Its high current and high voltage handling capabilities can effectively prevent battery overcharging, over-discharging and short circuiting, ensuring the safety and reliability of the battery system.
5. **Inverter design**: In inverter design, the high withstand voltage characteristics and low on-resistance of IRF9540NSTRPBF-VB make it suitable for use as a switching element, providing stable power conversion and efficient current control, suitable for solar inverters and other power conversion applications.
Due to its high voltage, high current carrying capacity and low on-resistance, IRF9540NSTRPBF-VB is widely used in various power management, load control and high-efficiency switching applications, which can meet the needs of high performance and reliability.
1. **Power management**: The IRF9540NSTRPBF-VB performs well in power management circuits, especially in DC-DC converters and switching power supplies. Its high withstand voltage and low on-resistance enable it to work efficiently in high voltage environments, suitable for power modules, adapters and battery management systems.
2. **Motor drive**: In motor drive applications, the IRF9540NSTRPBF-VB can be used as a switching element in an H-bridge circuit. Its high leakage current capability and low on-resistance enable it to efficiently control the forward and reverse rotation and start and stop of the motor, and is widely used in motor drives, automation equipment and home appliance control.
3. **Load switch**: This MOSFET is suitable for load switching circuits, such as power line switches, lighting controls and other load switching applications. Its high current carrying capacity and low on-resistance give it excellent performance in load switches, suitable for use in a variety of industrial and consumer electronic devices.
4. **Battery protection circuit**: IRF9540NSTRPBF-VB is also suitable for battery protection circuits to control the charging and discharging process. Its high current and high voltage handling capabilities can effectively prevent battery overcharging, over-discharging and short circuiting, ensuring the safety and reliability of the battery system.
5. **Inverter design**: In inverter design, the high withstand voltage characteristics and low on-resistance of IRF9540NSTRPBF-VB make it suitable for use as a switching element, providing stable power conversion and efficient current control, suitable for solar inverters and other power conversion applications.
Due to its high voltage, high current carrying capacity and low on-resistance, IRF9540NSTRPBF-VB is widely used in various power management, load control and high-efficiency switching applications, which can meet the needs of high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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