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IRF9520NSTRR-VB Product details
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IRF9520NSTRR-VB Product Introduction
IRF9520NSTRR-VB is a P-channel MOSFET in TO263 package, suitable for high voltage and high power applications. This MOSFET has a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V, a gate threshold voltage of -2V, and excellent conduction performance. Its on-resistance is 240mΩ when VGS is 4.5V, 200mΩ when VGS is 10V, and the maximum drain current is -12A. IRF9520NSTRR-VB uses Trench technology, with low on-resistance and efficient switching performance, suitable for power management, load switching and reverse current protection.
IRF9520NSTRR-VB is a P-channel MOSFET in TO263 package, suitable for high voltage and high power applications. This MOSFET has a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V, a gate threshold voltage of -2V, and excellent conduction performance. Its on-resistance is 240mΩ when VGS is 4.5V, 200mΩ when VGS is 10V, and the maximum drain current is -12A. IRF9520NSTRR-VB uses Trench technology, with low on-resistance and efficient switching performance, suitable for power management, load switching and reverse current protection.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
IRF9520NSTRR-VB Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**: 240mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 200mΩ @ VGS=10V
- **Drain current (ID)**: -12A
- **Operating temperature range**: -55°C to 150°C
- **Technology**: Trench technology
- **Power dissipation**: 45W (max)
- **Package type**: TO263
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**: 240mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 200mΩ @ VGS=10V
- **Drain current (ID)**: -12A
- **Operating temperature range**: -55°C to 150°C
- **Technology**: Trench technology
- **Power dissipation**: 45W (max)
Domain and module applications：
IRF9520NSTRR-VB Applicable Fields and Application Modules
1. **Load Switch**: The IRF9520NSTRR-VB is ideal for load switch applications, especially when a P-channel MOSFET is required for efficient control of the power supply and current switching. Its low on-resistance can reduce power consumption and improve the reliability of the power system.
2. **Reverse Current Protection**: In the reverse current protection circuit, the IRF9520NSTRR-VB can effectively prevent current backflow and protect key components in the circuit. It is widely used in battery-powered devices and power management modules.
3. **Power Management and DC-DC Converters**: This MOSFET can be used in efficient DC-DC converters, especially for applications that handle higher voltages and currents, such as solar inverters, industrial power supplies, and high-voltage power management modules.
4. **Motor drive**: The IRF9520NSTRR-VB performs well in motor drive applications, can handle large currents, and achieve safe power-off and reverse control of the motor through its reverse characteristics.
5. **Switching elements in analog circuits**: In analog circuits, the device can be used as an efficient switching element to achieve precise power distribution and signal conditioning, suitable for high-voltage drive circuits, power amplifiers, and power control modules.
The high voltage and low on-resistance of the IRF9520NSTRR-VB make it an ideal choice for a variety of power management and high-power applications, with wide application potential in industrial, communications, and consumer electronics.
1. **Load Switch**: The IRF9520NSTRR-VB is ideal for load switch applications, especially when a P-channel MOSFET is required for efficient control of the power supply and current switching. Its low on-resistance can reduce power consumption and improve the reliability of the power system.
2. **Reverse Current Protection**: In the reverse current protection circuit, the IRF9520NSTRR-VB can effectively prevent current backflow and protect key components in the circuit. It is widely used in battery-powered devices and power management modules.
3. **Power Management and DC-DC Converters**: This MOSFET can be used in efficient DC-DC converters, especially for applications that handle higher voltages and currents, such as solar inverters, industrial power supplies, and high-voltage power management modules.
4. **Motor drive**: The IRF9520NSTRR-VB performs well in motor drive applications, can handle large currents, and achieve safe power-off and reverse control of the motor through its reverse characteristics.
5. **Switching elements in analog circuits**: In analog circuits, the device can be used as an efficient switching element to achieve precise power distribution and signal conditioning, suitable for high-voltage drive circuits, power amplifiers, and power control modules.
The high voltage and low on-resistance of the IRF9520NSTRR-VB make it an ideal choice for a variety of power management and high-power applications, with wide application potential in industrial, communications, and consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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