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IRF9520NSTRL-VB Product details
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IRF9520NSTRL-VB Product Introduction
The IRF9520NSTRL-VB is a single P-channel power MOSFET in a TO263 package, designed to handle high voltage loads. It has a drain-source breakdown voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V, making it ideal for load switching and power management in high voltage applications. Its threshold voltage (Vth) is -2V, and its on-resistance (RDS(ON)) is 240mΩ at VGS=4.5V and 200mΩ at VGS=10V. The maximum drain current (ID) is -12A. Using Trench technology, this MOSFET provides good conduction performance and switching efficiency, making it an ideal choice for efficient circuit design.
The IRF9520NSTRL-VB is a single P-channel power MOSFET in a TO263 package, designed to handle high voltage loads. It has a drain-source breakdown voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V, making it ideal for load switching and power management in high voltage applications. Its threshold voltage (Vth) is -2V, and its on-resistance (RDS(ON)) is 240mΩ at VGS=4.5V and 200mΩ at VGS=10V. The maximum drain current (ID) is -12A. Using Trench technology, this MOSFET provides good conduction performance and switching efficiency, making it an ideal choice for efficient circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
IRF9520NSTRL-VB parameter description
- **Package type**: TO263
- **Channel configuration**: Single P channel
- **Drain-source breakdown voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS=4.5V
- 200mΩ @ VGS=10V
- **Drain current (ID)**: -12A
- **Technology**: Trench
- **Power dissipation**: 83W (max)
- **Thermal resistance between junction and ambient (RθJA)**: 62°C/W
- **Thermal resistance between junction and case (RθJC)**: 1.6°C/W
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: Turn on time is about 40ns, turn off time is about 100ns
- **Package type**: TO263
- **Channel configuration**: Single P channel
- **Drain-source breakdown voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS=4.5V
- 200mΩ @ VGS=10V
- **Drain current (ID)**: -12A
- **Technology**: Trench
- **Power dissipation**: 83W (max)
- **Thermal resistance between junction and ambient (RθJA)**: 62°C/W
- **Thermal resistance between junction and case (RθJC)**: 1.6°C/W
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: Turn on time is about 40ns, turn off time is about 100ns
Domain and module applications：
Applications and Module Examples
1. **High Voltage Power Switches**
The IRF9520NSTRL-VB is particularly suitable for switching control of high voltage power supplies, such as negative voltage applications in AC/DC and DC/DC converters. Its 100V VDS and Trench technology enable it to provide efficient switching in these modules.
2. **Electric Vehicles**
In the high voltage battery management system of electric vehicles, this MOSFET can be used for load switching and current regulation, ensuring stable and reliable performance in high voltage environments.
3. **Solar Inverters**
The IRF9520NSTRL-VB can be used as a load switch and voltage regulation component in solar inverter systems. Its P-channel design and high breakdown voltage make it ideal for high voltage inverter and energy transmission applications.
4. **Industrial Motor Drives**
For industrial motor drives, this MOSFET can effectively switch high current loads and is suitable for motor drive systems that require high power and high voltage control.
5. **Power Protection Circuit**
This MOSFET is also suitable for power protection and overcurrent protection circuits, especially in high-voltage power supply environments. Its high voltage withstand capability and reliable switching characteristics enable it to protect circuits from damage caused by overcurrent or overvoltage.
1. **High Voltage Power Switches**
The IRF9520NSTRL-VB is particularly suitable for switching control of high voltage power supplies, such as negative voltage applications in AC/DC and DC/DC converters. Its 100V VDS and Trench technology enable it to provide efficient switching in these modules.
2. **Electric Vehicles**
In the high voltage battery management system of electric vehicles, this MOSFET can be used for load switching and current regulation, ensuring stable and reliable performance in high voltage environments.
3. **Solar Inverters**
The IRF9520NSTRL-VB can be used as a load switch and voltage regulation component in solar inverter systems. Its P-channel design and high breakdown voltage make it ideal for high voltage inverter and energy transmission applications.
4. **Industrial Motor Drives**
For industrial motor drives, this MOSFET can effectively switch high current loads and is suitable for motor drive systems that require high power and high voltage control.
5. **Power Protection Circuit**
This MOSFET is also suitable for power protection and overcurrent protection circuits, especially in high-voltage power supply environments. Its high voltage withstand capability and reliable switching characteristics enable it to protect circuits from damage caused by overcurrent or overvoltage.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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