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IRF9520NSPBF-VB Product details
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IRF9520NSPBF-VB MOSFET Product Introduction:
The IRF9520NSPBF-VB is a high-performance P-channel MOSFET in a TO263 package, suitable for applications requiring high voltage resistance and high current handling capabilities. Its maximum drain-source voltage (VDS) is -100V, which can handle higher negative voltage scenarios and provide good current control. The gate-source voltage (VGS) tolerance range of the device is ±20V, which can ensure reliable operation over a large voltage range. The threshold voltage (Vth) is -2V, indicating that the MOSFET can be effectively turned on at low gate drive voltages. The on-resistance (RDS(ON)) is 240mΩ (VGS = 4.5V) and 200mΩ (VGS = 10V), and its low on-resistance ensures efficient switching performance and low power consumption. The IRF9520NSPBF-VB uses Trench technology to improve the device's conduction performance and switching speed, and has a maximum drain current (ID) of -12A.
The IRF9520NSPBF-VB is a high-performance P-channel MOSFET in a TO263 package, suitable for applications requiring high voltage resistance and high current handling capabilities. Its maximum drain-source voltage (VDS) is -100V, which can handle higher negative voltage scenarios and provide good current control. The gate-source voltage (VGS) tolerance range of the device is ±20V, which can ensure reliable operation over a large voltage range. The threshold voltage (Vth) is -2V, indicating that the MOSFET can be effectively turned on at low gate drive voltages. The on-resistance (RDS(ON)) is 240mΩ (VGS = 4.5V) and 200mΩ (VGS = 10V), and its low on-resistance ensures efficient switching performance and low power consumption. The IRF9520NSPBF-VB uses Trench technology to improve the device's conduction performance and switching speed, and has a maximum drain current (ID) of -12A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description:
- **Package**: TO263 (surface mount package suitable for high power applications)
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -100V – Suitable for high voltage negative power switch and control applications.
- **Gate-source voltage (VGS)**: ±20V – Ensures reliable control over a wide voltage range.
- **Threshold voltage (Vth)**: -2V – Enables the MOSFET to turn on at low gate voltage.
- **Drain-source on-resistance (RDS(ON))**:
- 240mΩ (at VGS = 4.5V)
- 200mΩ (at VGS = 10V) – Ensures low power consumption and high efficiency.
- **Drain current (ID)**: -12A – Supports higher current handling capability.
- **Technology**: Trench technology – provides low on-resistance and fast switching characteristics.
- **Package**: TO263 (surface mount package suitable for high power applications)
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -100V – Suitable for high voltage negative power switch and control applications.
- **Gate-source voltage (VGS)**: ±20V – Ensures reliable control over a wide voltage range.
- **Threshold voltage (Vth)**: -2V – Enables the MOSFET to turn on at low gate voltage.
- **Drain-source on-resistance (RDS(ON))**:
- 240mΩ (at VGS = 4.5V)
- 200mΩ (at VGS = 10V) – Ensures low power consumption and high efficiency.
- **Drain current (ID)**: -12A – Supports higher current handling capability.
- **Technology**: Trench technology – provides low on-resistance and fast switching characteristics.
Domain and module applications：
Application Examples:
1. **Power switch**: IRF9520NSPBF-VB is suitable for **high voltage negative power switch**. In power management systems, it can be used as a switch controller to ensure efficient switching in negative voltage circuits while reducing power consumption, suitable for operation under high voltage and high current loads.
2. **Power protection circuit**: The high withstand voltage characteristics of this device make it suitable for overvoltage and overcurrent protection in **protection circuit**, especially in negative voltage circuits, providing reliable protection for the system.
3. **Motor control system**: IRF9520NSPBF-VB can be used for **motor control**, especially reverse current protection and switching applications in high voltage DC motors. It can provide smooth current control in negative voltage motor drive applications.
4. **DC-DC converter**: In **DC-DC converter**, especially negative voltage converters, IRF9520NSPBF-VB can be used as a power MOSFET to improve conversion efficiency and system stability.
5. **Load Switch**: In applications that require high-voltage load switching, such as **industrial control equipment** and **telecommunication equipment**, this MOSFET can be used for switching control of negative voltage loads to ensure system efficiency and reliability.
The high voltage and high current handling capabilities of the IRF9520NSPBF-VB make it an ideal choice for a variety of applications, especially in electronic systems that require negative voltage control and efficient power management.
1. **Power switch**: IRF9520NSPBF-VB is suitable for **high voltage negative power switch**. In power management systems, it can be used as a switch controller to ensure efficient switching in negative voltage circuits while reducing power consumption, suitable for operation under high voltage and high current loads.
2. **Power protection circuit**: The high withstand voltage characteristics of this device make it suitable for overvoltage and overcurrent protection in **protection circuit**, especially in negative voltage circuits, providing reliable protection for the system.
3. **Motor control system**: IRF9520NSPBF-VB can be used for **motor control**, especially reverse current protection and switching applications in high voltage DC motors. It can provide smooth current control in negative voltage motor drive applications.
4. **DC-DC converter**: In **DC-DC converter**, especially negative voltage converters, IRF9520NSPBF-VB can be used as a power MOSFET to improve conversion efficiency and system stability.
5. **Load Switch**: In applications that require high-voltage load switching, such as **industrial control equipment** and **telecommunication equipment**, this MOSFET can be used for switching control of negative voltage loads to ensure system efficiency and reliability.
The high voltage and high current handling capabilities of the IRF9520NSPBF-VB make it an ideal choice for a variety of applications, especially in electronic systems that require negative voltage control and efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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