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IRF9510STRR-VB Product details
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The IRF9510STRR-VB is a high voltage P-channel MOSFET in a TO263 package. It features a drain-source voltage (VDS) of up to -100V and a gate drive voltage (VGS) of ±20V. The device has a gate threshold voltage (Vth) of -2V, which is suitable for stable operation in a negative voltage environment. The on-resistance (RDS(ON)) of the IRF9510STRR-VB is 240mΩ @ VGS = 4.5V and 200mΩ @ VGS = 10V at lower gate voltages, ensuring efficient power conversion and low heat loss. Using Trench technology, the IRF9510STRR-VB is able to provide reliable performance and long life in high voltage applications.
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The IRF9510STRR-VB is a high voltage P-channel MOSFET in a TO263 package. It features a drain-source voltage (VDS) of up to -100V and a gate drive voltage (VGS) of ±20V. The device has a gate threshold voltage (Vth) of -2V, which is suitable for stable operation in a negative voltage environment. The on-resistance (RDS(ON)) of the IRF9510STRR-VB is 240mΩ @ VGS = 4.5V and 200mΩ @ VGS = 10V at lower gate voltages, ensuring efficient power conversion and low heat loss. Using Trench technology, the IRF9510STRR-VB is able to provide reliable performance and long life in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
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- **Package**: TO263
- **Configuration**: Single P-channel
- **Drain-Source Voltage (VDS)**: -100V
- **Gate Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: -2V
- **On-Resistance (RDS(ON))**:
- 240mΩ @ VGS = 4.5V
- 200mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -12A
- **Technology**: Trench
- **Operating Temperature Range**: -55°C to 150°C
- **Package Features**: The TO263 package provides good thermal performance and is suitable for high power applications.
**
- **Package**: TO263
- **Configuration**: Single P-channel
- **Drain-Source Voltage (VDS)**: -100V
- **Gate Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: -2V
- **On-Resistance (RDS(ON))**:
- 240mΩ @ VGS = 4.5V
- 200mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -12A
- **Technology**: Trench
- **Operating Temperature Range**: -55°C to 150°C
- **Package Features**: The TO263 package provides good thermal performance and is suitable for high power applications.
**
Domain and module applications：
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1. **High Voltage Power Management**
The IRF9510STRR-VB is suitable for high voltage power management modules, such as high voltage power converters and regulators. In these applications, it can handle drain-source voltages up to -100V and provide stable switching performance to ensure efficient energy conversion and stability of the power system.
2. **Load Switch**
This MOSFET is also suitable for high voltage load switches, such as those in industrial control systems. It can operate stably under load current, and its low on-resistance helps reduce power consumption, making it suitable for load switch applications that require efficient energy control and reliability.
3. **Power Amplifier Power Management**
The IRF9510STRR-VB performs well in power management of power amplifiers, such as power amplifier modules in communication equipment. Its high voltage tolerance and low on-resistance help provide stable performance in high power applications and improve the overall efficiency of the system.
4. **Motor drive circuit**
Due to its excellent switching performance and high voltage withstand capability, this MOSFET is also suitable for motor drive circuits. It can provide reliable switching and protection functions in situations where high voltage motors need to be controlled or high current loads need to be driven.
1. **High Voltage Power Management**
The IRF9510STRR-VB is suitable for high voltage power management modules, such as high voltage power converters and regulators. In these applications, it can handle drain-source voltages up to -100V and provide stable switching performance to ensure efficient energy conversion and stability of the power system.
2. **Load Switch**
This MOSFET is also suitable for high voltage load switches, such as those in industrial control systems. It can operate stably under load current, and its low on-resistance helps reduce power consumption, making it suitable for load switch applications that require efficient energy control and reliability.
3. **Power Amplifier Power Management**
The IRF9510STRR-VB performs well in power management of power amplifiers, such as power amplifier modules in communication equipment. Its high voltage tolerance and low on-resistance help provide stable performance in high power applications and improve the overall efficiency of the system.
4. **Motor drive circuit**
Due to its excellent switching performance and high voltage withstand capability, this MOSFET is also suitable for motor drive circuits. It can provide reliable switching and protection functions in situations where high voltage motors need to be controlled or high current loads need to be driven.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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