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IRF9510STRLPBF-VB Product details
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IRF9510STRLPBF-VB MOSFET Product Introduction
The IRF9510STRLPBF-VB is a high-performance single P-channel power MOSFET in a TO263 package. It has high voltage resistance and a drain-source voltage (VDS) of -100V, making it ideal for negative voltage environments. The gate-source voltage (VGS) of this MOSFET is ±20V and the turn-on threshold voltage (Vth) is -2V, ensuring reliable turn-on at lower gate voltages. The on-resistance (RDS(ON)) of the IRF9510STRLPBF-VB is 200mΩ at VGS of 10V and 240mΩ at 4.5V, providing good current handling capabilities. Its Trench technology ensures high efficiency and low power consumption, with a maximum drain current of -12A, making it suitable for a variety of high current load applications.
The IRF9510STRLPBF-VB is a high-performance single P-channel power MOSFET in a TO263 package. It has high voltage resistance and a drain-source voltage (VDS) of -100V, making it ideal for negative voltage environments. The gate-source voltage (VGS) of this MOSFET is ±20V and the turn-on threshold voltage (Vth) is -2V, ensuring reliable turn-on at lower gate voltages. The on-resistance (RDS(ON)) of the IRF9510STRLPBF-VB is 200mΩ at VGS of 10V and 240mΩ at 4.5V, providing good current handling capabilities. Its Trench technology ensures high efficiency and low power consumption, with a maximum drain current of -12A, making it suitable for a variety of high current load applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
IRF9510STRLPBF-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS = 4.5V
- 200mΩ @ VGS = 10V
- **Drain current (ID)**: -12A
- **Technology type**: Trench technology
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS = 4.5V
- 200mΩ @ VGS = 10V
- **Drain current (ID)**: -12A
- **Technology type**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management system**: Due to the high voltage withstand capability and moderate on-resistance of the IRF9510STRLPBF-VB, it is very suitable for switch and protection circuits in power management systems, especially in scenarios where negative voltage control is required, such as battery-powered systems and load switch modules.
2. **Inverter application**: This MOSFET can be used in inverter circuits, especially in high-voltage DC-AC conversion situations. Its high withstand voltage characteristics and low on-resistance make it excellent in inverter design, ensuring high efficiency and stability.
3. **Motor drive**: In motor drive applications that need to control high current, the low RDS(ON) and high current capability of the IRF9510STRLPBF-VB enable it to effectively control motor loads, suitable for motor drive modules in power tools and industrial automation equipment.
4. **Load Switch**: The high current capability and good thermal management performance of this MOSFET make it suitable for high current load switching applications, such as high power relay replacement or power switching systems, and can work stably in high current and high voltage environments.
These characteristics of IRF9510STRLPBF-VB make it excel in high voltage and high current applications, and it is suitable for use in a variety of electronic systems that require high performance and reliability.
1. **Power management system**: Due to the high voltage withstand capability and moderate on-resistance of the IRF9510STRLPBF-VB, it is very suitable for switch and protection circuits in power management systems, especially in scenarios where negative voltage control is required, such as battery-powered systems and load switch modules.
2. **Inverter application**: This MOSFET can be used in inverter circuits, especially in high-voltage DC-AC conversion situations. Its high withstand voltage characteristics and low on-resistance make it excellent in inverter design, ensuring high efficiency and stability.
3. **Motor drive**: In motor drive applications that need to control high current, the low RDS(ON) and high current capability of the IRF9510STRLPBF-VB enable it to effectively control motor loads, suitable for motor drive modules in power tools and industrial automation equipment.
4. **Load Switch**: The high current capability and good thermal management performance of this MOSFET make it suitable for high current load switching applications, such as high power relay replacement or power switching systems, and can work stably in high current and high voltage environments.
These characteristics of IRF9510STRLPBF-VB make it excel in high voltage and high current applications, and it is suitable for use in a variety of electronic systems that require high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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