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IRF8852TRPBF-VB Product details
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Product Introduction:
IRF8852TRPBF-VB is a high-performance dual N-channel MOSFET packaged in TSSOP8. It uses Trench technology to provide excellent on-resistance and switching performance. The device has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, making it suitable for medium voltage applications. The threshold voltage (Vth) of the IRF8852TRPBF-VB is 1.7V, and its on-resistance (RDS(ON)) is 19mΩ at VGS=4.5V and 12mΩ at VGS=10V. This gives it lower power consumption and high efficiency in low voltage and high current applications, and is particularly suitable for applications requiring high switching speeds and low on-resistance.
IRF8852TRPBF-VB is a high-performance dual N-channel MOSFET packaged in TSSOP8. It uses Trench technology to provide excellent on-resistance and switching performance. The device has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, making it suitable for medium voltage applications. The threshold voltage (Vth) of the IRF8852TRPBF-VB is 1.7V, and its on-resistance (RDS(ON)) is 19mΩ at VGS=4.5V and 12mΩ at VGS=10V. This gives it lower power consumption and high efficiency in low voltage and high current applications, and is particularly suitable for applications requiring high switching speeds and low on-resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description:
- **Package type**: TSSOP8
- **Configuration**: Common source N-channel (N+N-Channel)
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 19mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Drain current (ID)**: 8.6A
- **Technology**: Trench technology
- **Input capacitance (Ciss)**: Up to 2400pF
- **Output capacitance (Coss)**: Up to 1000pF
- **Reverse recovery time (trr)**: Suitable for high-speed switching applications
- **Package type**: TSSOP8
- **Configuration**: Common source N-channel (N+N-Channel)
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 19mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Drain current (ID)**: 8.6A
- **Technology**: Trench technology
- **Input capacitance (Ciss)**: Up to 2400pF
- **Output capacitance (Coss)**: Up to 1000pF
- **Reverse recovery time (trr)**: Suitable for high-speed switching applications
Domain and module applications：
Application fields and module examples:
Due to its superior switching characteristics and low on-resistance, the IRF8852TRPBF-VB MOSFET is suitable for the following fields and modules:
1. **Battery-powered devices**:
In mobile devices or portable electronic products, the IRF8852TRPBF-VB can provide efficient power switching under low voltage conditions, reduce energy loss and improve battery life. Its low RDS(ON) characteristics help improve the energy efficiency of the overall system.
2. **DC-DC converter**:
In DC-DC converters, the low on-resistance and high current handling capability of this MOSFET make it an ideal choice. It can be used as a synchronous rectifier to improve conversion efficiency and reduce heat generation.
3. **Switching power supply (SMPS)**:
The IRF8852TRPBF-VB can be used in high-frequency switching applications in switch-mode power supplies to help improve the overall performance and stability of the system. Due to its low on-resistance and high switching speed, it is suitable for handling high-frequency switching requirements.
4. **Motor Control**:
In motor drive and control systems, this MOSFET is able to provide fast switching response and high current handling capabilities for starting, stopping and speed regulation of motors.
5. **Load Switch**:
The IRF8852TRPBF-VB can be used as a load switch module to control power distribution and switching in various electronic devices, especially in applications that require high efficiency and low power consumption.
The high-efficiency performance and wide application capabilities of the IRF8852TRPBF-VB make it an ideal choice for a variety of medium voltage, high switching frequency applications.
Due to its superior switching characteristics and low on-resistance, the IRF8852TRPBF-VB MOSFET is suitable for the following fields and modules:
1. **Battery-powered devices**:
In mobile devices or portable electronic products, the IRF8852TRPBF-VB can provide efficient power switching under low voltage conditions, reduce energy loss and improve battery life. Its low RDS(ON) characteristics help improve the energy efficiency of the overall system.
2. **DC-DC converter**:
In DC-DC converters, the low on-resistance and high current handling capability of this MOSFET make it an ideal choice. It can be used as a synchronous rectifier to improve conversion efficiency and reduce heat generation.
3. **Switching power supply (SMPS)**:
The IRF8852TRPBF-VB can be used in high-frequency switching applications in switch-mode power supplies to help improve the overall performance and stability of the system. Due to its low on-resistance and high switching speed, it is suitable for handling high-frequency switching requirements.
4. **Motor Control**:
In motor drive and control systems, this MOSFET is able to provide fast switching response and high current handling capabilities for starting, stopping and speed regulation of motors.
5. **Load Switch**:
The IRF8852TRPBF-VB can be used as a load switch module to control power distribution and switching in various electronic devices, especially in applications that require high efficiency and low power consumption.
The high-efficiency performance and wide application capabilities of the IRF8852TRPBF-VB make it an ideal choice for a variety of medium voltage, high switching frequency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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