Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
6.8/10A |
|
|
18mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
6.8/10A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
6.8/10A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Half-Bridge-N+N |
|
|
|
|
|
|
|
**
- **Package**: SOP8
- **Configuration**: Half-bridge N+N-Channel
- **Drain-Source Voltage (VDS)**: 30V
- **Gate Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 1.7V
- **On-Resistance (RDS(ON))**:
- 21.6mΩ @ VGS = 4.5V
- 18mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 6.8A (Continuous) / 10A (Pulsed)
- **Technology**: Trench
- **Operating Temperature Range**: -55°C to 150°C
- **Package Features**: Provides good thermal management and low parasitic inductance.
**
Domain and module applications：
**
1. **DC-DC Converter**
The IRF8513TRPBF-VB is particularly suitable for use in low voltage DC-DC converters where high efficiency power conversion and fast switching characteristics are required. Its low RDS(ON) and high current handling capability make it very effective in low voltage side applications.
2. **Motor Drive Circuit**
Due to its half-bridge configuration and good switching characteristics, this MOSFET excels in low power motor drive applications, such as power tools and fan control circuits. Trench technology enables it to handle large transient currents.
3. **Load Switch**
In intelligent power management modules, the IRF8513TRPBF-VB can also be used as an efficient load switch for controlling current management in battery-powered devices. Its low conduction losses make it particularly suitable for power management modules for portable devices.
4. **Power Module**
The high efficiency conduction characteristics of this MOSFET make it suitable for power modules in computing devices, such as power supply systems in servers or communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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