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IRF840-VB Product details

Product introduction:

Product Introduction:
IRF840-VB is a high voltage N-channel power MOSFET in TO220 package, suitable for a variety of power conversion and switching applications. The device has a VDS of 500V and can operate stably under high voltage conditions, while having a continuous drain current capability of 13A. The gate-source voltage (VGS) of IRF840-VB is ±30V, the threshold voltage is 3.1V, and its on-resistance RDS(ON) is 660mΩ when VGS=10V. These features make it very suitable for high-efficiency switching applications, and it is designed with planar technology to ensure good thermal performance and durability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 500V 3.1V 13A 660mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 500V 3.1V 13A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 500V 3.1V 13A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description:
- **Package type**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.1V
- **On-resistance (RDS(ON))**: 660mΩ @ VGS=10V
- **Drain current (ID)**: 13A
- **Power dissipation (Ptot)**: 125W
- **Technology**: Planar MOSFET technology
- **Junction temperature (Tj)**: Up to 175°C
- **Transfer characteristics**: ID vs. VGS and VDS vs. ID have a typical linear response, providing higher switching speeds.
- **Input capacitance (Ciss)**: Up to 1700pF, suitable for fast switching in high-power applications.

Domain and module applications:

Applications and Module Examples:
IRF840-VB MOSFETs are widely used in power electronics due to their high voltage handling capability and moderate current handling capability. The following are common applications and modules for this device:

1. **Switch Mode Power Supply (SMPS)**:
IRF840-VB is commonly used as a high-side switch in switch mode power supplies. Because it can withstand a drain-source voltage of 500V, it is suitable for rectification and switching applications in high voltage DC input or AC-DC power conversion.

2. **Motor Drive Control**:
In motor drive modules in industrial and consumer equipment, IRF840-VB MOSFETs can be used as power switching elements to control the start, stop and speed regulation of motors, especially when high voltages need to be handled.

3. **Uninterruptible Power Supply (UPS)**:
In uninterruptible power supplies, IRF840-VB can be used in DC-DC conversion and inverter modules. Its high withstand voltage characteristics ensure stability and efficiency under high voltage conditions.

4. **Lighting control and dimming circuits**:
In industrial lighting systems, IRF840-VB MOSFET is often used in dimming modules to control the brightness of lamps through fast switching, especially for driving circuits for high-voltage halogen lamps or LED lighting.

The high voltage and high current characteristics of IRF840-VB make it suitable for playing a key role in various high-power conversion circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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