IRF840IPBF-VB Product details
Product introduction:
The IRF840IPBF-VB is a high voltage N-channel MOSFET suitable for a variety of switching applications. The device is packaged in a TO-220F housing and has a maximum drain-source voltage (VDS) of up to 650V, making it ideal for handling high voltage operations. Its gate-source voltage (VGS) can withstand up to ±30V, ensuring reliable switching control. Its threshold voltage (Vth) is 3.5V, ensuring effective switching at medium gate voltages. RDS(ON) is 830mΩ (at VGS = 10V), effectively controlling current and supporting a maximum drain current (ID) of 10A. Manufactured using planar technology, it ensures reliable operation in high power and high voltage environments.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package**: TO-220F (fully isolated, reducing the need for additional insulation in high voltage applications)
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V – Suitable for high voltage power conversion and switching applications.
- **Gate-source voltage (VGS)**: ±30V – High tolerance drive circuit, providing stability in harsh electrical environments.
- **Threshold voltage (Vth)**: 3.5V – The gate voltage required to turn on the MOSFET.
- **Drain-source on-resistance (RDS(ON))**: 830mΩ (at VGS = 10V) – A key parameter in switching power.
- **Drain current (ID)**: 10A – Maximum current handling capability.
- **Technology**: Planar technology – Provides efficient performance in high power applications with good thermal management.
Domain and module applications:
1. **Power Modules**: The IRF840IPBF-VB is ideal for **switching power supplies** and **DC-DC converters**. Its high VDS rating of 650V makes it ideal in the main switch of power conversion circuits, especially in industrial power and communication power systems.
2. **Motor Control**: Its high voltage and medium current handling capabilities make it ideal for **motor control circuits**, especially in applications that require high voltage operation, such as industrial motor drives or HVAC systems.
3. **Lighting Ballast**: This MOSFET is widely used in **high intensity discharge (HID) lighting** and **LED drivers**, where high efficiency in high voltage switching is critical for energy saving and stable operation.
4. **Inverters and Solar Systems**: With its high breakdown voltage and ability to handle switching in high-voltage environments, the IRF840IPBF-VB is well suited for **solar inverters** and **uninterruptible power supplies (UPS)**, helping to efficiently convert DC power to AC power.
5. **EV Chargers**: It can be integrated into **EV charging systems** to handle the high-voltage switching required for AC-DC conversion during charging, ensuring efficient transmission of power.
The versatility of this MOSFET makes it ideal for high-voltage applications across multiple industries.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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